为了减小氧化石墨烯(graphene oxide,GO)在WC-10Co硬质合金中的团聚以及高温液相烧结过程中Co对GO的溶蚀作用,通过化学镀的方式制备了改性氧化石墨烯(GO/Ni),随后利用静电吸附以及机械搅拌两种方法分别制备了WC-10Co-GO复合粉体和WC-10C...为了减小氧化石墨烯(graphene oxide,GO)在WC-10Co硬质合金中的团聚以及高温液相烧结过程中Co对GO的溶蚀作用,通过化学镀的方式制备了改性氧化石墨烯(GO/Ni),随后利用静电吸附以及机械搅拌两种方法分别制备了WC-10Co-GO复合粉体和WC-10Co-GO/Ni复合粉体。用扫描电子显微镜(scanning electron microscope,SEM)和透射电子显微镜(transmission electron microscope,TEM)对改性后的GO以及复合粉体进行微观形貌的表征。采用气压烧结工艺制备了WC-10Co、WC-10Co-GO和WC-10Co-GO/Ni硬质合金并研究了硬质合金的物理性能和力学性能。实验结果表明:随着GO和GO/Ni的加入,硬质合金的密度和洛氏硬度有了略微的降低;对比WC-10Co硬质合金,WC-10Co-GO和WC-10Co-GO/Ni硬质合金的横向断裂强度分别提升了35.2%和59.7%,其中GO/Ni作为作为基体增强相的效果最佳。展开更多
A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electr...A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.展开更多
文摘为了减小氧化石墨烯(graphene oxide,GO)在WC-10Co硬质合金中的团聚以及高温液相烧结过程中Co对GO的溶蚀作用,通过化学镀的方式制备了改性氧化石墨烯(GO/Ni),随后利用静电吸附以及机械搅拌两种方法分别制备了WC-10Co-GO复合粉体和WC-10Co-GO/Ni复合粉体。用扫描电子显微镜(scanning electron microscope,SEM)和透射电子显微镜(transmission electron microscope,TEM)对改性后的GO以及复合粉体进行微观形貌的表征。采用气压烧结工艺制备了WC-10Co、WC-10Co-GO和WC-10Co-GO/Ni硬质合金并研究了硬质合金的物理性能和力学性能。实验结果表明:随着GO和GO/Ni的加入,硬质合金的密度和洛氏硬度有了略微的降低;对比WC-10Co硬质合金,WC-10Co-GO和WC-10Co-GO/Ni硬质合金的横向断裂强度分别提升了35.2%和59.7%,其中GO/Ni作为作为基体增强相的效果最佳。
基金supported by the National Natural Science Foundation of China(Grant Nos.61307036 and 61307037)the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD),Chinathe University Science Research Project of Jiangsu Province,China(Grant No.12KJB510028)
文摘A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.