Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-S...Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_(oc) of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.展开更多
基金The National Natural Science Foundation of China(Nos.6100605061076051)+2 种基金the Natural Science Foundation of Bei Jing(No.2151004)the National High Technology Research and Development Program of China(No.2011AA50507)the Fundamental Research Funds for the Central Universities(No.13ZD05)
基金National Natural Science Foundation of China(61006050)National High Technology Research and Development Program of China(2011AA050507)+1 种基金Natural Science Foundation of Beijing(2151004)Fundamental Research Funds for the Central Universities in China(13ZD05)
基金Project supported by the National Key Research and Deveopment Program of China(Grant No.2018YFB1500402)the National Natural Science Foundation of China(Grant Nos.61674084 and 61874167)+5 种基金the Fundamental Research Funds for Central Universities,Chinathe Natural Science Foundation of Tianjin City,China(Grant No.17JCYBJC41400)the Open Fund of the Key Laboratory of Optical Information Science&Technology of Ministry of Education of China(Grant No.2017KFKT014)the 111 Project,China(Grant No.B16027)the International Cooperation Base,China(Grant No.2016D01025)Tianjin International Joint Research and Development Center,China。
文摘Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_(oc) of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.
