A single-transistor CMOS active pixel image sensor(1T CMOS APS)architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-...A single-transistor CMOS active pixel image sensor(1T CMOS APS)architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower.Thus,the reset and selected transistors can be removed.In addition,the reset and selected signal lines can be shared to reduce the metal signal line,leading to a very high fill factor.The pixel design and operation principles are discussed in detail.The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35μm CMOS AMIS technology.展开更多
基金Supported by the Key Project of National Natural Science Foundation of China(61036004)the Guangdong Natural Science Foundation(10466585979-2004985)+2 种基金the Shenzhen Science&Technology Foundation(CXB201005250031A)the Fundamental Research Project of Shenzhen Science&Technology Foundation(JC201005280670A)the International Collaboration Project of Shenzhen Science&Technology Foundation(ZYA2010006030006A)。
文摘A single-transistor CMOS active pixel image sensor(1T CMOS APS)architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower.Thus,the reset and selected transistors can be removed.In addition,the reset and selected signal lines can be shared to reduce the metal signal line,leading to a very high fill factor.The pixel design and operation principles are discussed in detail.The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35μm CMOS AMIS technology.
