Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes o...Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2018 YFB 2200500)the National Natural Science Foundation of China(Grant Nos.62050073,62090054,and 61975196)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC022)。
文摘Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.
