Ta_(2)O_(5) and Nb_(2)O_(5) films are deposited by conventional e−beam method under different electron beam currents.The optical transmittance,chemical composition,absorption,scattering,surface topography and laser-in...Ta_(2)O_(5) and Nb_(2)O_(5) films are deposited by conventional e−beam method under different electron beam currents.The optical transmittance,chemical composition,absorption,scattering,surface topography and laser-induced damage threshold(LIDT)of the films are comparatively studied.It is shown that the increase of electron beam current results in a decrease of the optical transmittance and stoichiometry,whereas it increases the absorption,scattering and rms roughness for both Ta_(2)O_(5) and Nb_(2)O_(5) films.However,the LIDT increases first and then decreases with the increase of electron beam current.In addition,the annealing improves the optical transmittance,stoichiometry and LIDT for the two kinds of films.Both the effects of electron beam current and annealing on the LIDT can be mainly attributed to three factors:substoichiometric defects,structural defects and adhesive force.Furthermore,the comparative results indicate that the laser damage resistance of Ta_(2)O_(5) is lower than that of Nb_(2)O_(5).展开更多
基金by the Youth Science Research Foundation of China University of Mining and Technology(No 2009A058)the Fundamental Research Funds for the Central Universities(No 2010Qnb06).
文摘Ta_(2)O_(5) and Nb_(2)O_(5) films are deposited by conventional e−beam method under different electron beam currents.The optical transmittance,chemical composition,absorption,scattering,surface topography and laser-induced damage threshold(LIDT)of the films are comparatively studied.It is shown that the increase of electron beam current results in a decrease of the optical transmittance and stoichiometry,whereas it increases the absorption,scattering and rms roughness for both Ta_(2)O_(5) and Nb_(2)O_(5) films.However,the LIDT increases first and then decreases with the increase of electron beam current.In addition,the annealing improves the optical transmittance,stoichiometry and LIDT for the two kinds of films.Both the effects of electron beam current and annealing on the LIDT can be mainly attributed to three factors:substoichiometric defects,structural defects and adhesive force.Furthermore,the comparative results indicate that the laser damage resistance of Ta_(2)O_(5) is lower than that of Nb_(2)O_(5).