Designed ZrxSi1-xO2 films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors.Compared to a single bent energy band,the bandgap structure with combining bent and fla...Designed ZrxSi1-xO2 films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors.Compared to a single bent energy band,the bandgap structure with combining bent and flat energy bands exhibits larger memory window,faster program/erase speed,lower charge loss even at 200℃ for 104s,and wider temperature insensitive regions.The tunneling thickness together with electron recaptured efficiency in the trapping layer,and the balance of two competing electron loss mechanisms in the bent and flat energy band regions collectively contribute to the improved memory characteristics.Therefore,the proposed ZrxSi1-xO2 with combining bent and flat energy bands should be a promising candidate for future nonvolatile memory applications,taking into consideration of the trade-off between the operation speed and retention characteristics.展开更多
A thin-flexible multiband terahertz metamaterial absorber （MA） has been investigated. Each unit cell of the MA consists of a simple metal structure, which includes the top metal resonator ring and the bottom metalli...A thin-flexible multiband terahertz metamaterial absorber （MA） has been investigated. Each unit cell of the MA consists of a simple metal structure, which includes the top metal resonator ring and the bottom metallic ground plane, separated by a thin-flexible dielectric spacer. Finite-difference time domain simulation indicates that this MA can achieve over 99% absorption at frequencies of 1.50 THz, 3.33 THz, and 5.40 THz by properly assembling the sandwiched structure. However, because of its asymmetric structure, the MA is polarization-sensitive and can tune the absorptivity of the second absorption peak by changing the incident polarization angle. The effect of the error of the structural parameters on the absorption efficiency is also carefully analyzed in detail to guide the fabrication. Moreover, the proposed MA exhibits high refractive-index sensing sensitivity, which has potential applications in multi-wavelength sensing in the terahertz region.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51402004)the Science and Technology Research Key Project of Education Department of Henan Province of China(Grant No.19A140001)。
文摘Designed ZrxSi1-xO2 films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors.Compared to a single bent energy band,the bandgap structure with combining bent and flat energy bands exhibits larger memory window,faster program/erase speed,lower charge loss even at 200℃ for 104s,and wider temperature insensitive regions.The tunneling thickness together with electron recaptured efficiency in the trapping layer,and the balance of two competing electron loss mechanisms in the bent and flat energy band regions collectively contribute to the improved memory characteristics.Therefore,the proposed ZrxSi1-xO2 with combining bent and flat energy bands should be a promising candidate for future nonvolatile memory applications,taking into consideration of the trade-off between the operation speed and retention characteristics.
基金Project supported by the National Natural Science Foundation of China(Grant No.11504006)the Key Scientific Research Project of Higher Education of Henan Province,China(Grant No.15A140002)the Science and Technology Planning Project of Henan Province,China(Grant No.142300410366)
文摘A thin-flexible multiband terahertz metamaterial absorber （MA） has been investigated. Each unit cell of the MA consists of a simple metal structure, which includes the top metal resonator ring and the bottom metallic ground plane, separated by a thin-flexible dielectric spacer. Finite-difference time domain simulation indicates that this MA can achieve over 99% absorption at frequencies of 1.50 THz, 3.33 THz, and 5.40 THz by properly assembling the sandwiched structure. However, because of its asymmetric structure, the MA is polarization-sensitive and can tune the absorptivity of the second absorption peak by changing the incident polarization angle. The effect of the error of the structural parameters on the absorption efficiency is also carefully analyzed in detail to guide the fabrication. Moreover, the proposed MA exhibits high refractive-index sensing sensitivity, which has potential applications in multi-wavelength sensing in the terahertz region.
