Metal-semiconductor Janus nanostructures with asymmetry and directionality have recently aroused significant interest,both in fundamental light-matter interactions mechanism and in technological applications.Here we r...Metal-semiconductor Janus nanostructures with asymmetry and directionality have recently aroused significant interest,both in fundamental light-matter interactions mechanism and in technological applications.Here we report the synthesis of different Au-ZnO Janus nanostructures via a facile one-pot colloid method.The growth mechanism is revealed by a series of designed synthesis experiments.The light absorption properties are determined by both the decrease of dipole oscillations of the free electrons and the plasmon-induced hot-electron transfer.Moreover,the finite-difference time-domain(FDTD)simulation method is used to elucidate the electric field distributions of these Janus nanostructures.展开更多
Few-layer two-dimensional(2D)semiconductor nanosheets with a layer-dependent band gap are attractive building blocks for large-area thin-film electronics.A general approach is developed to fast prepare uniform and pha...Few-layer two-dimensional(2D)semiconductor nanosheets with a layer-dependent band gap are attractive building blocks for large-area thin-film electronics.A general approach is developed to fast prepare uniform and phase-pure 2HWSe2 semiconducting nanosheets at a large scale,which involves the supercritical carbon dioxide(SC-CO2)treatment and a mild sonication-assisted exfoliation process in aqueous solution.The as-prepared 2H-WSe2 nanosheets preserve the intrinsic physical properties and intact crystal structures,as confirmed by Raman,x-ray photoelectron spectroscopy(XPS),and scanning transmission electron microscope(STEM).The uniform 2H-WSe2 nanosheets can disperse well in water for over six months.Such good dispersivity and uniformity enable these nanosheets to self-assembly into thickness-controlled thin films for scalable fabrication of large-area arrays of thin-film electronics.The electronic transport and photoelectronic properties of the field-effect transistor based on the self-assembly 2H-WSe2 thin film have also been explored.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11274370 and 51471185)the National Key Research and Development Program of China(Grant Nos.2016YFJC020013 and 2018FYA0305800)
文摘Metal-semiconductor Janus nanostructures with asymmetry and directionality have recently aroused significant interest,both in fundamental light-matter interactions mechanism and in technological applications.Here we report the synthesis of different Au-ZnO Janus nanostructures via a facile one-pot colloid method.The growth mechanism is revealed by a series of designed synthesis experiments.The light absorption properties are determined by both the decrease of dipole oscillations of the free electrons and the plasmon-induced hot-electron transfer.Moreover,the finite-difference time-domain(FDTD)simulation method is used to elucidate the electric field distributions of these Janus nanostructures.
基金National Natural Science Foundation of China(Grant Nos.51771224,51772087,and 51471185)the National Key R&D Program of China(Grant Nos.2016YFJC020013 and 2018FYA0305800)Fujian Institute of Innovation,Chinese Academy of Sciences.
文摘Few-layer two-dimensional(2D)semiconductor nanosheets with a layer-dependent band gap are attractive building blocks for large-area thin-film electronics.A general approach is developed to fast prepare uniform and phase-pure 2HWSe2 semiconducting nanosheets at a large scale,which involves the supercritical carbon dioxide(SC-CO2)treatment and a mild sonication-assisted exfoliation process in aqueous solution.The as-prepared 2H-WSe2 nanosheets preserve the intrinsic physical properties and intact crystal structures,as confirmed by Raman,x-ray photoelectron spectroscopy(XPS),and scanning transmission electron microscope(STEM).The uniform 2H-WSe2 nanosheets can disperse well in water for over six months.Such good dispersivity and uniformity enable these nanosheets to self-assembly into thickness-controlled thin films for scalable fabrication of large-area arrays of thin-film electronics.The electronic transport and photoelectronic properties of the field-effect transistor based on the self-assembly 2H-WSe2 thin film have also been explored.
