The light emitting properties of porous silicon formed by electrochemical etching process and the potential distribution at the Si/electrolyte (HF) interface have been studied. The results show that porous silicon pho...The light emitting properties of porous silicon formed by electrochemical etching process and the potential distribution at the Si/electrolyte (HF) interface have been studied. The results show that porous silicon photoluminescent properties are sensitive to the formation conditions. During anodic oxidation, selective dissolution of silicon that leads to porous structure formation has significant influence on the interface capacitance characteristics.展开更多
文摘The light emitting properties of porous silicon formed by electrochemical etching process and the potential distribution at the Si/electrolyte (HF) interface have been studied. The results show that porous silicon photoluminescent properties are sensitive to the formation conditions. During anodic oxidation, selective dissolution of silicon that leads to porous structure formation has significant influence on the interface capacitance characteristics.