不同试验条件下沉积在EGR(exhaust gas recirculation)冷却器换热管内表面的颗粒物会形成不同表面微观结构的沉积层。为了量化分析沉积处表面微观结构的分布特征和三维表面的起伏特征,提出采用沉积层表面结构特征面积占比和表面分形盒...不同试验条件下沉积在EGR(exhaust gas recirculation)冷却器换热管内表面的颗粒物会形成不同表面微观结构的沉积层。为了量化分析沉积处表面微观结构的分布特征和三维表面的起伏特征,提出采用沉积层表面结构特征面积占比和表面分形盒维数两个参数分析沉积层的表面微观结构变化规律,并利用其分析碳氢化合物(HC,hydrocarbons)浓度对沉积层表面微观结构的影响。结果表明:试验气体中的HC等挥发性物质的析出会影响EGR气体中颗粒物的尺寸,改变沉积层表面凹坑和凸起结构的数量和尺寸分布;随着HC浓度的增加,沉积层表面凸起结构所占的面积百分比逐渐增加,凹坑结构所占面积百分比变化较小;用于表征沉积层表面起伏程度的沉积层表面分形盒维数随试验气体中HC浓度的增加而逐渐增加。展开更多
We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The ci...We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The circuit is simulated and fabricated with SMIC 0.18μm mixed-signal technology,and our measurements demonstrate that its temperature coefficient is 44ppm/℃ and its PSRR is - 46dB, It works well when Vdd is above 650mV. The active area of the circuit is about 0.05mm^2.展开更多
文摘不同试验条件下沉积在EGR(exhaust gas recirculation)冷却器换热管内表面的颗粒物会形成不同表面微观结构的沉积层。为了量化分析沉积处表面微观结构的分布特征和三维表面的起伏特征,提出采用沉积层表面结构特征面积占比和表面分形盒维数两个参数分析沉积层的表面微观结构变化规律,并利用其分析碳氢化合物(HC,hydrocarbons)浓度对沉积层表面微观结构的影响。结果表明:试验气体中的HC等挥发性物质的析出会影响EGR气体中颗粒物的尺寸,改变沉积层表面凹坑和凸起结构的数量和尺寸分布;随着HC浓度的增加,沉积层表面凸起结构所占的面积百分比逐渐增加,凹坑结构所占面积百分比变化较小;用于表征沉积层表面起伏程度的沉积层表面分形盒维数随试验气体中HC浓度的增加而逐渐增加。
文摘We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The circuit is simulated and fabricated with SMIC 0.18μm mixed-signal technology,and our measurements demonstrate that its temperature coefficient is 44ppm/℃ and its PSRR is - 46dB, It works well when Vdd is above 650mV. The active area of the circuit is about 0.05mm^2.
