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Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits 被引量:1
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作者 孙岩 张甲兴 +1 位作者 张民选 郝跃 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第2期94-98,共5页
We first study the impacts of soft errors on various types of CAM for different feature sizes.After presenting a soft error immune CAM cell,SSB-RCAM,we propose two kinds of reliable CAM,DCF-RCAM and DCK-RCAM. In addit... We first study the impacts of soft errors on various types of CAM for different feature sizes.After presenting a soft error immune CAM cell,SSB-RCAM,we propose two kinds of reliable CAM,DCF-RCAM and DCK-RCAM. In addition,we present an ignore mechanism to protect dual cell redundancy CAMs against soft errors.Experimental results indicate that the 11T-NOR CAM cell has an advantage in soft error immunity.Based on 11T-NOR,the proposed reliable CAMs reduce the SER by about 81%on average with acceptable overheads.The SER of dual cell redundancy CAMs can also be decreased using the ignore mechanism in specific applications. 展开更多
关键词 soft error content addressable memory RELIABILITY VULNERABILITY critical charge
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