Al沉积n型多孔硅表面钝化及其发光性能

采用电化学沉积Al方法钝化用脉冲电化学腐蚀制备的n型多孔硅(n-type porous silicon,n-PS)表面以改善其发光性能和稳定性。通过扫描电镜(SEM)、傅里叶变换红外吸收光谱(FT-IR)及在室温于500~700 nm范围内荧光光谱研究n-PS表面Al钝化后的表面结构、形貌及光致发光性能(PL),探讨Al在n-PS表面的钝化作用,并通过改变电压和时间研究钝化条件对PL性能的影响。研究结果表明:多孔硅经Al钝化后其表面结构显得更加致密均匀;与钝化前相比,其发光强度加强,约为钝化前的2倍,且分别在钝化电压为18 V及钝化时间为60 min或钝化电压为25 V及钝化时间为30 min左右时,其发光强度较高。

永冲电化学腐蚀制备n型多孔硅及其发光性能

采用脉冲电化学腐蚀法，以n型单晶硅为衬底制备多孔硅（n—PS），通过扫描电镜（SEM）、室温500—700nm范围内荧光光谱，系统研究腐蚀时间、占空比和脉冲频率对n-PS的结构形貌和可见光区室温光致发光特性（PL）的影响，结果表明，相比直流电化学腐蚀方法，脉冲腐蚀能获得孔径分布均匀且发光强度更高的多孔硅；随腐蚀时间、占空比和脉冲频率等腐蚀条件的变化，其发光峰位及发光强度均有明显改变；当等效腐蚀时间为30min、占空比为0．5、脉冲频率为10Hz时，制备的n—PS的PL强度较高，发光性能较好。

Surface modification of coconut-based activated carbon by SDS and its effects on Pb^(2+) adsorption

Coconut-based activated carbons were modified with sodium dodecyl sulfate (SDS). The activated carbons, which were modified by different concentrations of SDS, were characterized by acid/base titrations, textural analysis (BET), atomic absorption spectrochemical analysis and Zeta potential measurements. The effects of SDS modification on Pb2+ absorption were studied further. The results indicate that after the modification of SDS, there are new functional groups on the surface of modified activated carbons and the number of functional group has changed remarkably, the total acidity decreases observably, but the total alkalinity increases dramatically. With the increase of surface load with SDS, the Pb2+ adsorption mass of activated carbons increases and the optimal pH for Pb2+ adsorption of the SDS modified activated carbons is 5. The experimental data are simulated better by Freundlich isotherm model for the modified activated carbons, and the experimental data are simulated better by Langmuir isotherm model for unmodified ones.