A separate absorption,grading,charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated.It has a thin multiplication layer and a planar structure.Throu...A separate absorption,grading,charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated.It has a thin multiplication layer and a planar structure.Through the use of a well and a single floating guard ring to suppress edge breakdown,the device can easily be fabricated by one step epitaxial growth and one step diffusion.The dark current of a 30μm diameter device is as low as 0.028 nA at punch-through and 0.1 nA at 90%of the breakdown voltage.The responsivity at 1.55μm is 0.93 A/W at unity gain and the multiplication layer is estimated to be less than 300 nm.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61176053,61274069,61021003the National Key Basic Research Program of China under Grant No 2012CB933503the National High-Technology Research and Development Program of China under Grant No 2012AA012202.
文摘A separate absorption,grading,charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated.It has a thin multiplication layer and a planar structure.Through the use of a well and a single floating guard ring to suppress edge breakdown,the device can easily be fabricated by one step epitaxial growth and one step diffusion.The dark current of a 30μm diameter device is as low as 0.028 nA at punch-through and 0.1 nA at 90%of the breakdown voltage.The responsivity at 1.55μm is 0.93 A/W at unity gain and the multiplication layer is estimated to be less than 300 nm.