Nano-crystalline diamond films are successfully deposited on silicon substrates via the hot filament chemical vapour deposition process using a CH_(4)/H_(2)/Ar gas mixture.The as-grown films are analysed by using fiel...Nano-crystalline diamond films are successfully deposited on silicon substrates via the hot filament chemical vapour deposition process using a CH_(4)/H_(2)/Ar gas mixture.The as-grown films are analysed by using field emission scanning electron microscopy,micro-Raman spectroscopy and x-ray diffraction.These results show that the films consist of nano-diamond grains with sizes ranging from 10 to 100 nm,and argon is an important element in the formation of nano-crystalline diamonds.展开更多
We have deposited nano-crystalline diamond films in a routine hot filament chemical vapor deposition system,using CH_(4)/H_(2) gas mixture.Wfe used various measurements such as Reid emission scanning electron microsco...We have deposited nano-crystalline diamond films in a routine hot filament chemical vapor deposition system,using CH_(4)/H_(2) gas mixture.Wfe used various measurements such as Reid emission scanning electron microscopy,micro-Raman spectroscopy,x-ray photoelectron spectroscopy,and transmission electron microscopy for characterization.The result show that the films consist of a crystalline diamond phase with small grain sizes ranging from 20 to 100nm.展开更多
Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament.The orientation relationship of epitaxial diamond fil...Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament.The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model.The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60° type interface dislocation also supports this model.展开更多
基金Supported by the National Natural Science Foundation of Beijing under Grant No.2002009.
文摘Nano-crystalline diamond films are successfully deposited on silicon substrates via the hot filament chemical vapour deposition process using a CH_(4)/H_(2)/Ar gas mixture.The as-grown films are analysed by using field emission scanning electron microscopy,micro-Raman spectroscopy and x-ray diffraction.These results show that the films consist of nano-diamond grains with sizes ranging from 10 to 100 nm,and argon is an important element in the formation of nano-crystalline diamonds.
基金Supported by the National Natural Science Foundation of China under Grant No.19674006.
文摘We have deposited nano-crystalline diamond films in a routine hot filament chemical vapor deposition system,using CH_(4)/H_(2) gas mixture.Wfe used various measurements such as Reid emission scanning electron microscopy,micro-Raman spectroscopy,x-ray photoelectron spectroscopy,and transmission electron microscopy for characterization.The result show that the films consist of a crystalline diamond phase with small grain sizes ranging from 20 to 100nm.
基金Supported by the National Natural Science Foundation of China.
文摘Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament.The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model.The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60° type interface dislocation also supports this model.
