Narrow-bandgap tin-lead(Sn-Pb)mixed perovskite solar cells(PSCs)play a key role in constructing perovskite tandem solar cells that are potential to overpass Shockley-Queisser limit.A robust,chemically stable and lowte...Narrow-bandgap tin-lead(Sn-Pb)mixed perovskite solar cells(PSCs)play a key role in constructing perovskite tandem solar cells that are potential to overpass Shockley-Queisser limit.A robust,chemically stable and lowtemperature-processed hole transporting layer(HTL)is essential for building high-efficiency Sn-Pb solar cells and perovskite tandem solar cells.Here,we explore a roomtemperature-processed NiOx(L-NiOx)HTL based on nanocrystals(NCs)for Sn-Pb PSCs.In comparison with hightemperature-annealed NiOx(H-NiOx)film,the L-NiOx film shows deeper valence band and lower trap density,which increases the built-in potential and reduces carrier recombination,leading to a power conversion efficiency of 18.77%,the record for NiOx-based narrow-bandgap PSCs.Furthermore,the device maintains about 96%of its original efficiency after 50 days.This work provides a robust and room-temperatureprocessed HTL for highly efficient and stable narrow-bandgap PSCs.展开更多
基金the National Key Research and Development Program of China(2016YFA0204000)the National Natural Science Foundation of China(61935016,U1632118 and 21571129)+3 种基金start-up funding from ShanghaiTech Universitythe Center for High-resolution Electron Microscopy(C?EM)at ShanghaiTech University(EM02161943)Young 1000 Talents ProgramScience Fund for Creative Research Groups(21421004)。
文摘Narrow-bandgap tin-lead(Sn-Pb)mixed perovskite solar cells(PSCs)play a key role in constructing perovskite tandem solar cells that are potential to overpass Shockley-Queisser limit.A robust,chemically stable and lowtemperature-processed hole transporting layer(HTL)is essential for building high-efficiency Sn-Pb solar cells and perovskite tandem solar cells.Here,we explore a roomtemperature-processed NiOx(L-NiOx)HTL based on nanocrystals(NCs)for Sn-Pb PSCs.In comparison with hightemperature-annealed NiOx(H-NiOx)film,the L-NiOx film shows deeper valence band and lower trap density,which increases the built-in potential and reduces carrier recombination,leading to a power conversion efficiency of 18.77%,the record for NiOx-based narrow-bandgap PSCs.Furthermore,the device maintains about 96%of its original efficiency after 50 days.This work provides a robust and room-temperatureprocessed HTL for highly efficient and stable narrow-bandgap PSCs.
