Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

A quasi two-dimensional （2D） analytical model of a double-gate （DG） MOSFET with Schottky source/drain is developed based on the Poisson equation.The 2D potential distribution in the channel is calculated.An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition.The results of the model are verified by the numerical simulator DESSIS-ISE.

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