The formation of Gd/Cr interface,the growth mechanism and electronic structure of Gd over-layers were investigated by synchrotron radiation photoemission.It is shown that Gd adatoms interact with the Cr substrate weak...The formation of Gd/Cr interface,the growth mechanism and electronic structure of Gd over-layers were investigated by synchrotron radiation photoemission.It is shown that Gd adatoms interact with the Cr substrate weakly.A lower deposition rate of the Gd overlayer(l.0Å/min)favors the smooth growth of Gd/Cr interface.However,higher deposition rate(6.0Å/min)leads to the cluster growth of the Gd overlayer and the presence of a“two-peak”feature of Gd 4f emission.We correlate this feature with the different coordination number of surface atoms derived from cluster-induced surface roughness.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.19574042.
文摘The formation of Gd/Cr interface,the growth mechanism and electronic structure of Gd over-layers were investigated by synchrotron radiation photoemission.It is shown that Gd adatoms interact with the Cr substrate weakly.A lower deposition rate of the Gd overlayer(l.0Å/min)favors the smooth growth of Gd/Cr interface.However,higher deposition rate(6.0Å/min)leads to the cluster growth of the Gd overlayer and the presence of a“two-peak”feature of Gd 4f emission.We correlate this feature with the different coordination number of surface atoms derived from cluster-induced surface roughness.
