The valley splitting has been realized in the graphene/Ni heterostructure with the splitting value of 14 meV,and the obtained valley injecting efficiency from the heterostructure into graphene was 6.18%[Phys.Rev.B 921...The valley splitting has been realized in the graphene/Ni heterostructure with the splitting value of 14 meV,and the obtained valley injecting efficiency from the heterostructure into graphene was 6.18%[Phys.Rev.B 92115404(2015)].In this paper,we report a way to improve the valley splitting and the valley injecting efficiency of the graphene/Ni heterostructure.By intercalating an Au monolayer between the graphene and the Ni,the split can be increased up to 50 meV.However,the valley injecting efficiency is not improved because the splitted valley area of graphene moves away from the Fermi level.Then,we mend the deviation by covering a monolayer of Cu on the graphene.As a result,the valley injecting efficiency of the Cu/graphene/Au/Ni heterostructure reaches 10%,which is more than 60%improvement compared to the simple graphene/Ni heterostructure.Then we theoretically design a valley-injection device based on the Cu/graphene/Au/Ni heterostructure and demonstrate that the valley injection can be easily switched solely by changing the magnetization direction of Ni,which can be used to generate and control the valley-polarized current.展开更多
Three-dimensional(3 D)topological insulators(TIs)are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost pre...Three-dimensional(3 D)topological insulators(TIs)are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs.Here we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering.The SiO2/Si substrates enable us to electrically tune(Bi1-xSbx)2Te3 and Cr-doped(Bi1-xSbx)2 Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states,such as the quantum anomalous Hall effect(QAHE).This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.展开更多
基金Project supported by the National Key R&D Program of China(Grant No.2017YFF0206104)the National Natural Science Foundation of China(Grant No.51871018)+1 种基金Beijing Laboratory of Metallic Materials and Processing for Modern Transportation,the Opening Project of Key Laboratory of Microelec-tronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing Natural Science Foundation,China(Grant No.Z180014)Beijing Outstanding Young Scientists Projects,China(Grant No.BJJWZYJH01201910005018).We gratefully acknowledge the Chinese Academy of Sciences for providing computation facilities.
文摘The valley splitting has been realized in the graphene/Ni heterostructure with the splitting value of 14 meV,and the obtained valley injecting efficiency from the heterostructure into graphene was 6.18%[Phys.Rev.B 92115404(2015)].In this paper,we report a way to improve the valley splitting and the valley injecting efficiency of the graphene/Ni heterostructure.By intercalating an Au monolayer between the graphene and the Ni,the split can be increased up to 50 meV.However,the valley injecting efficiency is not improved because the splitted valley area of graphene moves away from the Fermi level.Then,we mend the deviation by covering a monolayer of Cu on the graphene.As a result,the valley injecting efficiency of the Cu/graphene/Au/Ni heterostructure reaches 10%,which is more than 60%improvement compared to the simple graphene/Ni heterostructure.Then we theoretically design a valley-injection device based on the Cu/graphene/Au/Ni heterostructure and demonstrate that the valley injection can be easily switched solely by changing the magnetization direction of Ni,which can be used to generate and control the valley-polarized current.
基金National Key R&D Plan Program of China(Grant No.2017YFF0206104)National Key Scien-tific Research Projects of China(Grant No.2015CB921502)+3 种基金National Natural Science Foundation of China(Grant Nos.61574169 and 51871018)Beijing Laboratory of Metallic Materials and Processing for Modern Transportation,the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of SciencesBeijing Natural Science Foundation(Grant No.Z180014)Beijing Outstanding Young Scientists Projects(Grant No.BJJWZYJH01201910005018)。
文摘Three-dimensional(3 D)topological insulators(TIs)are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs.Here we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering.The SiO2/Si substrates enable us to electrically tune(Bi1-xSbx)2Te3 and Cr-doped(Bi1-xSbx)2 Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states,such as the quantum anomalous Hall effect(QAHE).This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.