报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放...报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放大器、驱动放大器、功率放大器、公用支路的小信号开关和收发切换的功率开关。在16~17GHz工作频带内测得该芯片接收通道增益大于21dB,噪声系数小于3.5dB;发射通道增益大于20.8dB,饱和功率大于40.8dBm,功率附加效率典型值30%。该芯片上集成的5位数字移相器、5位数字衰减器功能正常,达到设计要求。展开更多
采用0.25μm Ga N HEMT工艺,研制了一款X波段发射前端多功能MMIC,片上集成了一个单刀双掷(SPDT)开关和一个功率放大器电路。其中SPDT开关采用对称的两路双器件并联结构,功率放大器采用三级放大拓扑结构设计,电路采用电抗匹配方式兼顾输...采用0.25μm Ga N HEMT工艺,研制了一款X波段发射前端多功能MMIC,片上集成了一个单刀双掷(SPDT)开关和一个功率放大器电路。其中SPDT开关采用对称的两路双器件并联结构,功率放大器采用三级放大拓扑结构设计,电路采用电抗匹配方式兼顾输出功率和效率。测试结果表明,在8~12 GHz频带内,芯片发射通道饱和输出功率为38.6~40.2 d Bm,功率附加效率为29%~34.5%,其中开关插入损耗约为0.8 d B,隔离度优于-45d B。该芯片面积为4 mm×2.1 mm。展开更多
利用Au-Sn共晶合金反应实现硅基圆片-芯片(Die to Wafer)键合是一种可行的集成方案,通过优化关键实验条件改善圆片-芯片键合层质量及键合强度,探索出适合射频微系统应用的D2W集成工艺条件;使用扫描电子显微镜(SEM)观察各组圆片-芯片界...利用Au-Sn共晶合金反应实现硅基圆片-芯片(Die to Wafer)键合是一种可行的集成方案,通过优化关键实验条件改善圆片-芯片键合层质量及键合强度,探索出适合射频微系统应用的D2W集成工艺条件;使用扫描电子显微镜(SEM)观察各组圆片-芯片界面质量状态,分析其键合层元素组成;在常温及300℃高温下完成水平推力测试,分析了键合样片键合强度和耐高温水平。结果表明:键合压力、Sn浸润时间、Au-Sn共晶合金温度及时间、芯片键合前处理等条件对键合层质量影响较大;对芯片进行前处理,使用少量助焊剂,240℃浸润2 min,并在温度为290℃、压力为4 N的条件下键合6 min,可以得到具备良好键合层质量的键合样片,水平推力达到55 N。展开更多
This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high effici...This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.展开更多
A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-1...A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_（ds） = 25 V and V_（gs） = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.展开更多
A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip Al GaN/GaN HEMT technology on a semiinsulating Si ...A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip Al GaN/GaN HEMT technology on a semiinsulating Si C substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 dB with a gain ripple of 0.35 dB over 9.1–11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used GaN HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9–11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 dBm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.展开更多
We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal...We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic （3D-EM） simulator, the amplifier demonstrates a maximum output power of 42.5 dBm （17.8 W）, PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vas = 30 V and Vgs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.展开更多
文摘报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放大器、驱动放大器、功率放大器、公用支路的小信号开关和收发切换的功率开关。在16~17GHz工作频带内测得该芯片接收通道增益大于21dB,噪声系数小于3.5dB;发射通道增益大于20.8dB,饱和功率大于40.8dBm,功率附加效率典型值30%。该芯片上集成的5位数字移相器、5位数字衰减器功能正常,达到设计要求。
文摘采用0.25μm Ga N HEMT工艺,研制了一款X波段发射前端多功能MMIC,片上集成了一个单刀双掷(SPDT)开关和一个功率放大器电路。其中SPDT开关采用对称的两路双器件并联结构,功率放大器采用三级放大拓扑结构设计,电路采用电抗匹配方式兼顾输出功率和效率。测试结果表明,在8~12 GHz频带内,芯片发射通道饱和输出功率为38.6~40.2 d Bm,功率附加效率为29%~34.5%,其中开关插入损耗约为0.8 d B,隔离度优于-45d B。该芯片面积为4 mm×2.1 mm。
文摘This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.
基金Project supported by the National Basic Research Program of China(No.2010CB327503)the National Natural Science Foundation of China(No.60890191)
文摘A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_（ds） = 25 V and V_（gs） = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.
文摘A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip Al GaN/GaN HEMT technology on a semiinsulating Si C substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 dB with a gain ripple of 0.35 dB over 9.1–11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used GaN HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9–11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 dBm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.
基金Project supported by the National Basic Research Program of China(No.2010CB327503)the National Natural Science Foundation of China(No.60890191)
文摘We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic （3D-EM） simulator, the amplifier demonstrates a maximum output power of 42.5 dBm （17.8 W）, PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vas = 30 V and Vgs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.
