Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine...Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO_2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors （FETs） are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm~^-2,it exhibits a current on/off ratio of 2.4×10^5,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm^2/（V·s）.展开更多
The selection of solvents for SiC nanowires（NWs） in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity,...The selection of solvents for SiC nanowires（NWs） in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity, isopropanol（IPA） is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2μm^（-1）,4μm^（-1）,6μm^（-1）,which corresponds to SiC NW concentrations of 0.1μg/μL,0.3μg/μL and 0.5μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6μm^（-1）.The mobility of a typical device is estimated to be 13.4cm^2/（V·s）.展开更多
基金Project supported by the National Science Foundation of China(Nos.50730008,60807008)the Doctoral Fund of Hebei Normal University of Science and Technology(No.2009YB007)
文摘Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO_2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors （FETs） are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm~^-2,it exhibits a current on/off ratio of 2.4×10^5,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm^2/（V·s）.
基金supported by the National Natural Science Foundation of China(Nos.50730008,60807008)the Doctoral Fund of Hebei Normal University of Science and Technology,China(No.2009YB007)
文摘The selection of solvents for SiC nanowires（NWs） in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity, isopropanol（IPA） is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2μm^（-1）,4μm^（-1）,6μm^（-1）,which corresponds to SiC NW concentrations of 0.1μg/μL,0.3μg/μL and 0.5μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6μm^（-1）.The mobility of a typical device is estimated to be 13.4cm^2/（V·s）.
