Silicon-on-insulator (SOI) is well known as "new technology of Si semiconductor IC process in 21 Contrary". Recently, SOI materials have been identified as the first choice of the semiconductor materials for...Silicon-on-insulator (SOI) is well known as "new technology of Si semiconductor IC process in 21 Contrary". Recently, SOI materials have been identified as the first choice of the semiconductor materials for fabricating low voltage and low power circuits. In order to improve the working performance of the SOI circuit under the radiating circumstance, ion implantation of fluorine impurity into the insulator layers in SOI materials is used for hardening the thermal gate oxide layer. Proper implantation depth of fluorine would further improve radiate resistance performance of the SOI circuit. This paper describes the SIMS analysis results of fluorine impurity implantation profile at the interface between top silicon layer and oxide insulator layer.展开更多
With the development of deep submicron integrated circuits (IC), copper metallization has been a replacement for conventional aluminum metallization in high density IC manufacture. But Cu is quite mobile in Si and has...With the development of deep submicron integrated circuits (IC), copper metallization has been a replacement for conventional aluminum metallization in high density IC manufacture. But Cu is quite mobile in Si and has poor adhesion to Si or SiO2, which could degrade the performance of copper interconnect. Therefore, a diffusion barrier layer between copper interconnect and Si device is necessary. In this paper, Ta-based barrier layers are deposited on Si substrate with deposition technology of magnetron sputtering. The depth profile of copper interconnect and Ta-diffusion barrier layer are investigated by second ion mass spectrometry(SIMS).展开更多
Mg of Gap doping characteristics in MOCVD have been studied by using SIMS (Secondary Ion Mass Spectrometry) measurement. The experimental results show that the Mg incorporation is considered to be limited by Mg revapo...Mg of Gap doping characteristics in MOCVD have been studied by using SIMS (Secondary Ion Mass Spectrometry) measurement. The experimental results show that the Mg incorporation is considered to be limited by Mg revaporization from the growth surface under the higher temperature and the Mg electrical activity decreases with increasing cP2Mg flow-rate. The activation energy of Mg in GaP is also respectively obtained.展开更多
文摘Silicon-on-insulator (SOI) is well known as "new technology of Si semiconductor IC process in 21 Contrary". Recently, SOI materials have been identified as the first choice of the semiconductor materials for fabricating low voltage and low power circuits. In order to improve the working performance of the SOI circuit under the radiating circumstance, ion implantation of fluorine impurity into the insulator layers in SOI materials is used for hardening the thermal gate oxide layer. Proper implantation depth of fluorine would further improve radiate resistance performance of the SOI circuit. This paper describes the SIMS analysis results of fluorine impurity implantation profile at the interface between top silicon layer and oxide insulator layer.
文摘With the development of deep submicron integrated circuits (IC), copper metallization has been a replacement for conventional aluminum metallization in high density IC manufacture. But Cu is quite mobile in Si and has poor adhesion to Si or SiO2, which could degrade the performance of copper interconnect. Therefore, a diffusion barrier layer between copper interconnect and Si device is necessary. In this paper, Ta-based barrier layers are deposited on Si substrate with deposition technology of magnetron sputtering. The depth profile of copper interconnect and Ta-diffusion barrier layer are investigated by second ion mass spectrometry(SIMS).
文摘Mg of Gap doping characteristics in MOCVD have been studied by using SIMS (Secondary Ion Mass Spectrometry) measurement. The experimental results show that the Mg incorporation is considered to be limited by Mg revaporization from the growth surface under the higher temperature and the Mg electrical activity decreases with increasing cP2Mg flow-rate. The activation energy of Mg in GaP is also respectively obtained.
