To understand the interaction in dipolar systems, it is necessary to investigate the structures formed by the interacting particles. We introduce a polymer acrylic resin carrier to fix the structures in the magnetic f...To understand the interaction in dipolar systems, it is necessary to investigate the structures formed by the interacting particles. We introduce a polymer acrylic resin carrier to fix the structures in the magnetic fluid （Fe3O4）. An aligned structure is investigated, which is formed under a magnetic field, and fixed in the cured acrylic resin film by evaporating the solvent at room temperature. The aligned structure is confirmed with the help of optical microscopy and optical diffraction for the cured film. Furthermore, we find substructures by using a scanning electronic microscope. Based on the curable and observable structures, a platform can be developed for investigating the aligned structures and configurations dominant by dipolar interaction. This is also helpful for the development of magnetic devices with orderly aligned structures.展开更多
The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measur...The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.展开更多
Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequ...Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequency noise in the sub-threshold regime agrees with McWhorter＇s theory for PMOS transistors while it agree with Hooge＇s theory（carrier mobility fluctuation） in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^（17） and 3.56×10^（18） cm^（-3）/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge＇s parameters are 2.42×10^（-5） and 4×10^（-4）.By consideration of BSIM compact model,it is shown that two noise parameters（NOIA and NOIB） can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^（17） cm^（-3）/eV and 9.31×10^（-4） V^（-1）.But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^（18） cm^（-3）/eV and 1.53×10^（-2） V^（-1）.Good agreement between simulation and experimental results is achieved.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60471023.
文摘To understand the interaction in dipolar systems, it is necessary to investigate the structures formed by the interacting particles. We introduce a polymer acrylic resin carrier to fix the structures in the magnetic fluid （Fe3O4）. An aligned structure is investigated, which is formed under a magnetic field, and fixed in the cured acrylic resin film by evaporating the solvent at room temperature. The aligned structure is confirmed with the help of optical microscopy and optical diffraction for the cured film. Furthermore, we find substructures by using a scanning electronic microscope. Based on the curable and observable structures, a platform can be developed for investigating the aligned structures and configurations dominant by dipolar interaction. This is also helpful for the development of magnetic devices with orderly aligned structures.
基金Supported by the National Natural Science Foundation of China under Grant No 60471023, and the Natural Science Foundation of Guangdong Province under Grant No 06300338.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61574048 and 61204112the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2014A030313656the Pearl River S&T Nova Program of Guangzhou
文摘The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.
基金supported by the National Natural Science Foundation of China(Nos.61574048,61204112)the Guangdong Natural Science Foundation(No.2014A030313656)
文摘Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequency noise in the sub-threshold regime agrees with McWhorter＇s theory for PMOS transistors while it agree with Hooge＇s theory（carrier mobility fluctuation） in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^（17） and 3.56×10^（18） cm^（-3）/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge＇s parameters are 2.42×10^（-5） and 4×10^（-4）.By consideration of BSIM compact model,it is shown that two noise parameters（NOIA and NOIB） can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^（17） cm^（-3）/eV and 9.31×10^（-4） V^（-1）.But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^（18） cm^（-3）/eV and 1.53×10^（-2） V^（-1）.Good agreement between simulation and experimental results is achieved.
