The half-metallic Heusler alloy CO_(2)FeSi is an ideal material in spintronic devices due to its higher spin polarization,higher Curie temperature and lower damping parameters.In this work,the dynamic magnetism of CO_...The half-metallic Heusler alloy CO_(2)FeSi is an ideal material in spintronic devices due to its higher spin polarization,higher Curie temperature and lower damping parameters.In this work,the dynamic magnetism of CO_(2)FeSi is modulated by electric field and it is demonstrated that the charge-spin conversion efficiencyξis continuous and controllable by the electric field.We further find an extremely highξin ferromagnetic/ferroelectric(FM/FE)heterostructures,which could be ascribed to interfacial effect in FM/FE interface.Moreover,we investigate that the charge-spin conversion efficiency varies with the electric field in a butterfly-like behavior,which accords with the S–E curve of Pb(Mg_(1/3)Nb_(2/3))O_3-Pb_(0.7)Ti_(0.3)O_(3)(PMN-PT)and could be attributed to strain effect.The modulation of charge-spin conversion efficiency in FM/FE heterostructures via electric field presents a profound potential for next-generation spintronic devices and applications of current-induced magnetization switching.展开更多
基金the National Natural Science Foundation of China(Grant No.11974149)the Natural Science Foundation of Gansu Province(Grant No.21JR7RA472)。
文摘The half-metallic Heusler alloy CO_(2)FeSi is an ideal material in spintronic devices due to its higher spin polarization,higher Curie temperature and lower damping parameters.In this work,the dynamic magnetism of CO_(2)FeSi is modulated by electric field and it is demonstrated that the charge-spin conversion efficiencyξis continuous and controllable by the electric field.We further find an extremely highξin ferromagnetic/ferroelectric(FM/FE)heterostructures,which could be ascribed to interfacial effect in FM/FE interface.Moreover,we investigate that the charge-spin conversion efficiency varies with the electric field in a butterfly-like behavior,which accords with the S–E curve of Pb(Mg_(1/3)Nb_(2/3))O_3-Pb_(0.7)Ti_(0.3)O_(3)(PMN-PT)and could be attributed to strain effect.The modulation of charge-spin conversion efficiency in FM/FE heterostructures via electric field presents a profound potential for next-generation spintronic devices and applications of current-induced magnetization switching.
