This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodio...This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode （PPD） and the voltage difference between the PPD and the floating diffusion （FD） node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor, respectively. The techniques shorten the charge transfer time from the PPD diode to the FD node effectively. The proposed process techniques do not need extra masks and do not cause harm to the fill factor. A sub array of 32 x 64 pixels was designed and implemented in the 0.18 #m CIS process with five implantation conditions splitting the N region in the PPD. The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques. Comparing the charge transfer time of the pixel with the different implantation conditions of the N region, the charge transfer time of 0.32 μs is achieved and 31% of image lag was reduced by using the proposed process techniques.展开更多
This paper presents a 12-bit column-parallel successive approximation register analog-to-digital con- verter （SAR ADC） for high-speed CMOS image sensors. A segmented binary-weighted switched capacitor digital- to-an...This paper presents a 12-bit column-parallel successive approximation register analog-to-digital con- verter （SAR ADC） for high-speed CMOS image sensors. A segmented binary-weighted switched capacitor digital- to-analog converter （CDAC） and a staggered structure MOM unit capacitor is used to reduce the ADC area and to make its layout fit double pixel pitches. An electrical field shielding layout method is proposed to eliminate the parasitic capacitance on the top plate of the unit capacitor. A dynamic power control technique is proposed to reduce the power consumption of a single channel during readout. An off-chip foreground digital calibration is adopted to compensate for the nonlinearity due to the mismatch of unit capacitors among the CDAC. The prototype SAR ADC is fabricated in a 0.18 μm 1P5M CIS process. A single SAR ADC occupies 20 × 2020μm2. Sampling at 833 kS/s, the measured differential nonlinearity, integral nonlinearity and effective number of bits of SAR ADC with calibration are 0.9/-1 LSB, 1/-1.1 LSB and 11.24 bits, respectively; the power consumption is only 0.26 mW under a 1.8-W supply and decreases linearly as the frame rate decreases.展开更多
基金supported by the National Natural Science Foundation of China(No.61234003)the Special Funds for Major State Basic Research Project of China(No.2011CB932902)
文摘This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode （PPD） and the voltage difference between the PPD and the floating diffusion （FD） node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor, respectively. The techniques shorten the charge transfer time from the PPD diode to the FD node effectively. The proposed process techniques do not need extra masks and do not cause harm to the fill factor. A sub array of 32 x 64 pixels was designed and implemented in the 0.18 #m CIS process with five implantation conditions splitting the N region in the PPD. The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques. Comparing the charge transfer time of the pixel with the different implantation conditions of the N region, the charge transfer time of 0.32 μs is achieved and 31% of image lag was reduced by using the proposed process techniques.
基金Project supported by the National Natural Science Foundation of China(No.61234003)the Special Funds for Major State Basic Research Project of China(No.2011CB932902)
文摘This paper presents a 12-bit column-parallel successive approximation register analog-to-digital con- verter （SAR ADC） for high-speed CMOS image sensors. A segmented binary-weighted switched capacitor digital- to-analog converter （CDAC） and a staggered structure MOM unit capacitor is used to reduce the ADC area and to make its layout fit double pixel pitches. An electrical field shielding layout method is proposed to eliminate the parasitic capacitance on the top plate of the unit capacitor. A dynamic power control technique is proposed to reduce the power consumption of a single channel during readout. An off-chip foreground digital calibration is adopted to compensate for the nonlinearity due to the mismatch of unit capacitors among the CDAC. The prototype SAR ADC is fabricated in a 0.18 μm 1P5M CIS process. A single SAR ADC occupies 20 × 2020μm2. Sampling at 833 kS/s, the measured differential nonlinearity, integral nonlinearity and effective number of bits of SAR ADC with calibration are 0.9/-1 LSB, 1/-1.1 LSB and 11.24 bits, respectively; the power consumption is only 0.26 mW under a 1.8-W supply and decreases linearly as the frame rate decreases.
