Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to fin...Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nbx Si1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current–voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.展开更多
Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density Jc are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions （oxygen ...Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density Jc are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions （oxygen pressure P and oxidation time t）, giving rise to Jc ranging from 100A/cm^2 to above 2000A/cm^2. Jc shows a familiar linear dependence on P×t in logarithmic scales. We calculate the energy levels of the phase- and flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future.展开更多
Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microw...Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microwave. By selecting different parts of the array, it can output a voltage from 1 μV to 256 μV. The flat region of the voltage steps is over 200 μA.This kind of array is useful for potential microvolt applications.展开更多
Switching current distributions of an Nb/Al-AlO2/Nb Josephson junction are measured in a temperature range from 25 mK to 800 mK. We analyse the phase escape properties by using the theory of Larkin and Ovchinnikov （L...Switching current distributions of an Nb/Al-AlO2/Nb Josephson junction are measured in a temperature range from 25 mK to 800 mK. We analyse the phase escape properties by using the theory of Larkin and Ovchinnikov （LO） which takes discrete energy levels into account. Our results show that the phase escape can be well described by the LO approach for temperatures near and below the crossover from thermal activation to macroscopic quantum tunneling. These results are helpful for further study of macroscopic quantum phenomena in Josephson junctions where discrete energy levels need to be considered.展开更多
Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage....Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage.For almost all applications,high-quality JJ arrays must be realized in a small chip area.This study proposes vertically quadruplestacked Nb/(NbxSi1-x/Nb)4 JJs to increase the integration density of junctions in an array.The current–voltage(I–V)characteristics of a single stack of Nb/(NbxSi1??x/Nb)4 JJs have been measured at 4.2 K.The uniformity of junctions in one stack and the uniformity of several stacks over the entire 2 inches wafer have been analyzed.By optimizing the fabrication parameters,a large-scale quadruple-stacked Nb/(NbxSi1??x/Nb)4 array consisting of 400000 junctions is realized.Good DC I–V characteristics are obtained,indicating the good uniformity of the large-scale array.展开更多
基金Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAK15B00)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401418)the Basic Research Foundation of National Institute of Metrology of China(Grant No.20-AKY1415)
文摘Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nbx Si1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current–voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 10534060 and 10874231)the Ministry of Science and Technology of China (Grant Nos 2006CB601007, 2006CB921107, and 2009CB929102)
文摘Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density Jc are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions （oxygen pressure P and oxidation time t）, giving rise to Jc ranging from 100A/cm^2 to above 2000A/cm^2. Jc shows a familiar linear dependence on P×t in logarithmic scales. We calculate the energy levels of the phase- and flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future.
基金Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAK15B00)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401418)the Basic Research Foundation of National Institute of Metrology of China(Grant No.20-AKY1415)
文摘Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microwave. By selecting different parts of the array, it can output a voltage from 1 μV to 256 μV. The flat region of the voltage steps is over 200 μA.This kind of array is useful for potential microvolt applications.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.10534060 and 10874231)National Basic Research Program of China (Grant Nos.2006CB601007,2006CB921107,and 2009CB929102)
文摘Switching current distributions of an Nb/Al-AlO2/Nb Josephson junction are measured in a temperature range from 25 mK to 800 mK. We analyse the phase escape properties by using the theory of Larkin and Ovchinnikov （LO） which takes discrete energy levels into account. Our results show that the phase escape can be well described by the LO approach for temperatures near and below the crossover from thermal activation to macroscopic quantum tunneling. These results are helpful for further study of macroscopic quantum phenomena in Josephson junctions where discrete energy levels need to be considered.
基金National Key R&D Program of China(Grant No.2016YFF0200402).
文摘Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage.For almost all applications,high-quality JJ arrays must be realized in a small chip area.This study proposes vertically quadruplestacked Nb/(NbxSi1-x/Nb)4 JJs to increase the integration density of junctions in an array.The current–voltage(I–V)characteristics of a single stack of Nb/(NbxSi1??x/Nb)4 JJs have been measured at 4.2 K.The uniformity of junctions in one stack and the uniformity of several stacks over the entire 2 inches wafer have been analyzed.By optimizing the fabrication parameters,a large-scale quadruple-stacked Nb/(NbxSi1??x/Nb)4 array consisting of 400000 junctions is realized.Good DC I–V characteristics are obtained,indicating the good uniformity of the large-scale array.
