In this paper,we demonstrate nBn InAs/InAsSb type II superlattice(T2SL)photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared(MWIR)detection.To improve operating temperature and suppress dark c...In this paper,we demonstrate nBn InAs/InAsSb type II superlattice(T2SL)photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared(MWIR)detection.To improve operating temperature and suppress dark current,a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO_(2) layer.These result in ultralow dark current density of 6.28×10^(-6)A/cm^(2)and 0.31 A/cm^(2)under-600 mV at 97 K and297 K,respectively,which is lower than most reported InAs/InAsSb-based MWIR photodetectors.Corresponding resistance area product values of 3.20×10^(4)Ω·cm^(2)and 1.32Ω·cm^(2)were obtained at 97 K and 297 K.A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5μm and a peak detectivity of 2.1×10^(9)cm·Hz^(1/2)/W were obtained at a high operating temperature up to 237 K.展开更多
In this paper,high-uniformity 2×64 silicon avalanche photodiode[APD]arrays are reported.Silicon multiple epitaxy technology was used,and the high performance APD arrays based on double-layer epiwafers are achieve...In this paper,high-uniformity 2×64 silicon avalanche photodiode[APD]arrays are reported.Silicon multiple epitaxy technology was used,and the high performance APD arrays based on double-layer epiwafers are achieved for the first time,to the best of our knowledge.A high-uniformity breakdown voltage with a fluctuation of smaller than 3.5 V is obtained for the fabricated APD arrays.The dark currents are below 90 pA for all 128 pixels at unity gain voltage.The pixels in the APD arrays show a gain factor of larger than 300 and a peak responsivity of 0.53 A/W@M=1 at 850 nm[corresponding to maximum external quantum efficiency of 81%]at room temperature.Quick optical pulse response time was measured,and a corresponding cutoff frequency up to 100 MHz was obtained.展开更多
基金supported by the National Science and Technology Major Project(No.2018YFE0200900)。
文摘In this paper,we demonstrate nBn InAs/InAsSb type II superlattice(T2SL)photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared(MWIR)detection.To improve operating temperature and suppress dark current,a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO_(2) layer.These result in ultralow dark current density of 6.28×10^(-6)A/cm^(2)and 0.31 A/cm^(2)under-600 mV at 97 K and297 K,respectively,which is lower than most reported InAs/InAsSb-based MWIR photodetectors.Corresponding resistance area product values of 3.20×10^(4)Ω·cm^(2)and 1.32Ω·cm^(2)were obtained at 97 K and 297 K.A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5μm and a peak detectivity of 2.1×10^(9)cm·Hz^(1/2)/W were obtained at a high operating temperature up to 237 K.
基金supported by the National Science and Technology Major Project(No.2018YFE0200900)。
文摘In this paper,high-uniformity 2×64 silicon avalanche photodiode[APD]arrays are reported.Silicon multiple epitaxy technology was used,and the high performance APD arrays based on double-layer epiwafers are achieved for the first time,to the best of our knowledge.A high-uniformity breakdown voltage with a fluctuation of smaller than 3.5 V is obtained for the fabricated APD arrays.The dark currents are below 90 pA for all 128 pixels at unity gain voltage.The pixels in the APD arrays show a gain factor of larger than 300 and a peak responsivity of 0.53 A/W@M=1 at 850 nm[corresponding to maximum external quantum efficiency of 81%]at room temperature.Quick optical pulse response time was measured,and a corresponding cutoff frequency up to 100 MHz was obtained.
