Mimicking tactile perception is critical to the development of advanced interactive neuromorphic platforms.Inspired by cutaneous perceptual functions,a bionic tactile perceptual platform is proposed.PDMS-based tactile...Mimicking tactile perception is critical to the development of advanced interactive neuromorphic platforms.Inspired by cutaneous perceptual functions,a bionic tactile perceptual platform is proposed.PDMS-based tactile sensors act as bionic skin touch receptors.Flexible indium tin oxide neuromorphic transistors fabricated with a single-step mask pro-cessing act as artificial synapses.Thus,the tactile perceptual platform possesses the ability of information processing.Interestingly,the flexible tactile perception platform can find applications in information encryption and decryption.With adoption of cipher,signal transmitted by the perception platform is encrypted.Thus,the security of information transmis-sion is effectively improved.The flexible tactile perceptual platform would have potentials in cognitive wearable devices,advanced human-machine interaction system,and intelligent bionic robots.展开更多
The formation of a denuded zone(DZ)by conventional furnace annealing(CFA)and rapid thermal annealing(RTA)based denudation processing is investigated and the gettering of copper(Cu)atoms in germanium co-doped heavily p...The formation of a denuded zone(DZ)by conventional furnace annealing(CFA)and rapid thermal annealing(RTA)based denudation processing is investigated and the gettering of copper(Cu)atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated.It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V)related complexes and germanium-vacancy(GeV)related complexes.Compared with HPCZ silicon,the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments.These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation,respectively.Furthermore,fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion,except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment,suggesting that germanium doping could improve the gettering of Cu contamination.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51972316)Ningbo Key Scientific and Technological Project(Grant No.2021Z116).
文摘Mimicking tactile perception is critical to the development of advanced interactive neuromorphic platforms.Inspired by cutaneous perceptual functions,a bionic tactile perceptual platform is proposed.PDMS-based tactile sensors act as bionic skin touch receptors.Flexible indium tin oxide neuromorphic transistors fabricated with a single-step mask pro-cessing act as artificial synapses.Thus,the tactile perceptual platform possesses the ability of information processing.Interestingly,the flexible tactile perception platform can find applications in information encryption and decryption.With adoption of cipher,signal transmitted by the perception platform is encrypted.Thus,the security of information transmis-sion is effectively improved.The flexible tactile perceptual platform would have potentials in cognitive wearable devices,advanced human-machine interaction system,and intelligent bionic robots.
基金Supported by the National Natural Science Foundation of China under Grant Nos 50832006 and 60906001the National Basic Research Program of China under Grant No 2007CB6130403,and the China Postdoctoral Science Foundation.
文摘The formation of a denuded zone(DZ)by conventional furnace annealing(CFA)and rapid thermal annealing(RTA)based denudation processing is investigated and the gettering of copper(Cu)atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated.It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V)related complexes and germanium-vacancy(GeV)related complexes.Compared with HPCZ silicon,the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments.These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation,respectively.Furthermore,fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion,except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment,suggesting that germanium doping could improve the gettering of Cu contamination.
