The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method. Acoustic phonon scattering, optical phonon scattering and Frohlich scattering are taken into ac...The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method. Acoustic phonon scattering, optical phonon scattering and Frohlich scattering are taken into account. It is found that the electron mobility decreases from 806cm2 /V.s for a transverse electrical field of 103 Vim to 426/112 cm2 /V.s for a transverse electrical field of 105/107 Vim. Further detailed analysis on carrier dynamics reveals that the low field mobility is dominated by the acoustic phonon scattering while the role of optical phonon scattering is to relax the electron energy below the optical phonon energy by efficient energy relaxation through optical phonon emission. Only when the transverse electrical field is larger than 106 V/m, the mobility can be determined by the optical phonon scattering, leading to a strong mobility degradation.展开更多
We investigate the influence of gate-source/drain （G-S/D） misalignment on the performance of bulk fin field effect transistors （FinFETs） through the three-dimensional （3D） full band Monte Carlo simulator. Severa...We investigate the influence of gate-source/drain （G-S/D） misalignment on the performance of bulk fin field effect transistors （FinFETs） through the three-dimensional （3D） full band Monte Carlo simulator. Several scat- tering mechanisms, such as acoustic and optical phonon scattering, ionized impurity scattering, impact ionization scattering and surface roughness scattering are considered in our simulator. The influence of G-S/D overlap and underlap on the on-states performance and carrier transport of bulk FinFETs are mainly discussed in our work. Our results show that the on-states currents increase with the increment of G-D/S overlap length and the positions of a potential barrier and average electron energy maximum vary with the G-D/S overlap length. The carrier transport phenomena in bulk FinFETs are due to the effect of scattering and the electric field in the overlap/underlap regime.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61306104 and 61250014, the Postdoctoral Science Foundation of China under Grant No 2013M540018, and the National Basic Research Program of China under Grant No 2011CBA00604.
文摘The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method. Acoustic phonon scattering, optical phonon scattering and Frohlich scattering are taken into account. It is found that the electron mobility decreases from 806cm2 /V.s for a transverse electrical field of 103 Vim to 426/112 cm2 /V.s for a transverse electrical field of 105/107 Vim. Further detailed analysis on carrier dynamics reveals that the low field mobility is dominated by the acoustic phonon scattering while the role of optical phonon scattering is to relax the electron energy below the optical phonon energy by efficient energy relaxation through optical phonon emission. Only when the transverse electrical field is larger than 106 V/m, the mobility can be determined by the optical phonon scattering, leading to a strong mobility degradation.
基金Project supported by the National Fundamental Basic Research Program of China(No.2011CBA00604)
文摘We investigate the influence of gate-source/drain （G-S/D） misalignment on the performance of bulk fin field effect transistors （FinFETs） through the three-dimensional （3D） full band Monte Carlo simulator. Several scat- tering mechanisms, such as acoustic and optical phonon scattering, ionized impurity scattering, impact ionization scattering and surface roughness scattering are considered in our simulator. The influence of G-S/D overlap and underlap on the on-states performance and carrier transport of bulk FinFETs are mainly discussed in our work. Our results show that the on-states currents increase with the increment of G-D/S overlap length and the positions of a potential barrier and average electron energy maximum vary with the G-D/S overlap length. The carrier transport phenomena in bulk FinFETs are due to the effect of scattering and the electric field in the overlap/underlap regime.
