目的探讨原发性中枢神经系统淋巴瘤(primary central nervous system lymphoma,PCNSL)患者的临床特征、病理情况和预后因素.方法回顾性分析2011年-2018年诊断为PCNSL的15例患者,患者分别接受了手术、化疗、全脑放疗(WBRT)等综合治疗.结...目的探讨原发性中枢神经系统淋巴瘤(primary central nervous system lymphoma,PCNSL)患者的临床特征、病理情况和预后因素.方法回顾性分析2011年-2018年诊断为PCNSL的15例患者,患者分别接受了手术、化疗、全脑放疗(WBRT)等综合治疗.结果15例患者的中位年龄为71岁(范围35~88岁).CD10,Bcl6,MUM1,Bcl2和MYC的蛋白表达分别占0%,57.1%,57.1%,100%和33.3%,有1例生发中心B细胞(GCB)和2例双重表达(MYC+/Bcl2+)淋巴瘤.12例患者为多发性脑病变.分别有7例,4例和3例患者接受了一线WBRT,二线WBRT和手术后巩固WBRT的治疗.中位随访时间为46.0个月,中位生存时间40.0个月,2年生存率为53.3%.与OS相关的因素是WBRT参与的时机(P=0.013).结论影响PCNSL治疗结果的因素是治疗方案.展开更多
High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time o...High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-μm-thick InSb epilayer grown at 450℃ with a Ⅴ/Ⅲ ratio of 5 and an indium pre-deposition time of 2.5s exhibits the optimum material quality, with a root-meansquare surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 10~4 cm^2/V·s. These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10 mV with the input voltage of 1 V at 9.3 mT and the electron mobility of 3.2 × 10~4 cm^2/V·s is determined, which indicates a strong potential for Hall applications.展开更多
文摘目的探讨原发性中枢神经系统淋巴瘤(primary central nervous system lymphoma,PCNSL)患者的临床特征、病理情况和预后因素.方法回顾性分析2011年-2018年诊断为PCNSL的15例患者,患者分别接受了手术、化疗、全脑放疗(WBRT)等综合治疗.结果15例患者的中位年龄为71岁(范围35~88岁).CD10,Bcl6,MUM1,Bcl2和MYC的蛋白表达分别占0%,57.1%,57.1%,100%和33.3%,有1例生发中心B细胞(GCB)和2例双重表达(MYC+/Bcl2+)淋巴瘤.12例患者为多发性脑病变.分别有7例,4例和3例患者接受了一线WBRT,二线WBRT和手术后巩固WBRT的治疗.中位随访时间为46.0个月,中位生存时间40.0个月,2年生存率为53.3%.与OS相关的因素是WBRT参与的时机(P=0.013).结论影响PCNSL治疗结果的因素是治疗方案.
基金Supported by the Hundred Talents Program of Chinese Academy of Sciencesthe CAS Interdisciplinary Innovation Team+1 种基金the National Natural Science Foundation of China under Grant Nos 61874179,61804161 and 61605236the Key Frontier Scientific Research Program of Chinese Academy of Sciences under Grant No QYZDB-SSW-JSC014
文摘High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-μm-thick InSb epilayer grown at 450℃ with a Ⅴ/Ⅲ ratio of 5 and an indium pre-deposition time of 2.5s exhibits the optimum material quality, with a root-meansquare surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 10~4 cm^2/V·s. These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10 mV with the input voltage of 1 V at 9.3 mT and the electron mobility of 3.2 × 10~4 cm^2/V·s is determined, which indicates a strong potential for Hall applications.
