期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP 被引量:1
1
作者 LIN Yuhan HUANG Ye +2 位作者 ZHU Qianpeng ZHANG Genggeng HU Junta 《Optoelectronics Letters》 EI 2021年第11期656-660,共5页
The poor film formation of Cd Se/Zn S quantum dots(QDs) during spin-coating makes a substantial impact on the device performance of quantum dot light-emitting diodes(QLEDs). This work proposes a method to improve the ... The poor film formation of Cd Se/Zn S quantum dots(QDs) during spin-coating makes a substantial impact on the device performance of quantum dot light-emitting diodes(QLEDs). This work proposes a method to improve the morphology of the quantum dot light-emitting layer(EML) by adding small organic molecular 4,4'-Bis(9 H-carbazol-9-yl) biphenyl(CBP) into the layer. Its surface roughness reduces from 6.21 nm to 2.71 nm, which guarantees a good contact between hole transport layer(HTL) and EML. Consequently, the Cd Se/Zn S QDs:CBP based QLED achieves maximum external quantum efficiency(EQE) of 5.86%, and maximum brightness of 10 363 cd/m^(2). It is demonstrated that the additive of small organic molecules could be an effective way to improve the brightness and the efficiency of QLEDs. 展开更多
关键词 QDs Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP ZnS
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部