Domain size and charge defects affecting the polarization switching of antiferroelectric domains

The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood.In this work,by using the phase field simulation,we have studied the polarization switching property of antiferroelectric domains.Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains,and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops.Moreover,we introduce charge defects into the sample and numerically investigate their influence.It is also shown that charge defects can induce local ferroelectric domains,which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop.Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.

一种片内温度传感器的集成设计与实现

面向高性能异构多核So C芯片的应用需求,集成设计并实现了8个高精度、低功耗的温度传感器,能够对芯片内部不同区域的温度状态进行动态监测,同时通过过温预警,结合系统级降频和电源关断等技术实现了全芯片的过温保护。芯片实测结果显示,温度传感器测量温度和芯片实际壳温具有很强的线性度,线性相关系数高达0.995 9,能够准确反映芯片内部温度的实时变化,有效提升芯片运行时的可靠性。