The relationship between structural and electronic phase transitions in V_(2)O_(3)thin films is of critical importance for understanding of the mechanism behind metal–insulator transition(MIT)and related technologica...The relationship between structural and electronic phase transitions in V_(2)O_(3)thin films is of critical importance for understanding of the mechanism behind metal–insulator transition(MIT)and related technological applications.Despite being extensively studied,there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far.Using V_(2)O_(3)thin films grown on r-plane Al2O3 substrates,which exhibit abrupt MIT and structural phase transition,we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements.Our result provides experimental evidence for clarifying this issue,which could form the basis of theoretical studies as well as technological applications in V_(2)O_(3).展开更多
基金Supported by the National Key R&D Program of China(Grant No.2017YFA0403600)Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences Large-Scale Scientific Facility(Grant No.U1532149).
文摘The relationship between structural and electronic phase transitions in V_(2)O_(3)thin films is of critical importance for understanding of the mechanism behind metal–insulator transition(MIT)and related technological applications.Despite being extensively studied,there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far.Using V_(2)O_(3)thin films grown on r-plane Al2O3 substrates,which exhibit abrupt MIT and structural phase transition,we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements.Our result provides experimental evidence for clarifying this issue,which could form the basis of theoretical studies as well as technological applications in V_(2)O_(3).
