提出了实现具有温度传感功能的RFID无源标签芯片电路设计思路，针对900MHz超高频EPC Class 0协议，采用多电压设计思想提出电子标签结构及参考电路，包括射频前端接收电路、数字逻辑控制部分、温度传感及量化、存储器四部分．采用Charte...提出了实现具有温度传感功能的RFID无源标签芯片电路设计思路，针对900MHz超高频EPC Class 0协议，采用多电压设计思想提出电子标签结构及参考电路，包括射频前端接收电路、数字逻辑控制部分、温度传感及量化、存储器四部分．采用Chartered 0．35μm CMOS工艺库仿真．芯片工作电流15．4μA（不包括存储器），温度量化采用一个低功耗8位逐次逼近模数转化器实现，输出温度量化误差在-10～120℃范围内为±2℃．展开更多
Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter....Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter. Using this method, the Q factor of 7.9 can be achieved in a 5nH inductor (operating frequency is 2GHz) while the errors in inductance are less than 0.5% compared with the aimed values. It is proved by experiments that this method can guarantee the sufficient accuracy but require less computation time. Therefore, it is of great use for the design of the inductor in CMOS RF IC’s.展开更多
文摘提出了实现具有温度传感功能的RFID无源标签芯片电路设计思路，针对900MHz超高频EPC Class 0协议，采用多电压设计思想提出电子标签结构及参考电路，包括射频前端接收电路、数字逻辑控制部分、温度传感及量化、存储器四部分．采用Chartered 0．35μm CMOS工艺库仿真．芯片工作电流15．4μA（不包括存储器），温度量化采用一个低功耗8位逐次逼近模数转化器实现，输出温度量化误差在-10～120℃范围内为±2℃．
文摘Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter. Using this method, the Q factor of 7.9 can be achieved in a 5nH inductor (operating frequency is 2GHz) while the errors in inductance are less than 0.5% compared with the aimed values. It is proved by experiments that this method can guarantee the sufficient accuracy but require less computation time. Therefore, it is of great use for the design of the inductor in CMOS RF IC’s.
