目的：观察麻醉诱导时气管导管不同套囊压力对全身麻醉患者气管插管时引起的心血管反应的影响。方法：选择40例在全身麻醉下行择期妇科手术的患者，美国麻醉医师协会（American Society of Anesthesiologists ，ASA）分级Ⅰ～Ⅱ级，随...目的：观察麻醉诱导时气管导管不同套囊压力对全身麻醉患者气管插管时引起的心血管反应的影响。方法：选择40例在全身麻醉下行择期妇科手术的患者，美国麻醉医师协会（American Society of Anesthesiologists ，ASA）分级Ⅰ～Ⅱ级，随机分为高压组（套囊压力为50 mmHg）和低压组（套囊压力为30 mmHg）。2组患者均经静脉依次给予舒芬太尼0．5μg／kg、丙泊酚2．5 mg／kg ，待患者意识消失后经静脉注射琥珀胆碱2 mg／kg诱导后插管。记录麻醉诱导前（基础值）、诱导后以及插管后1、2、3 min各时间点的收缩压、舒张压和心率，计算收缩压与心率的乘积（RPP）。结果：2组患者的年龄、体质量、身高、ASA分级差异均无统计学意义（P＞0．05）。2组患者麻醉诱导前的血压、心率及RPP差异均无统计学意义（P＞0．05）。高压组在插管后1、2 min的收缩压、舒张压均明显高于低压组（P＜0．05）；高压组在插管后1、2、3 min的RPP均明显高于低压组（P＜0．01）。结论：控制气管导管的套囊压力对减轻全身麻醉气管插管时发生的心血管反应有一定作用。展开更多
目的比较静脉注射氟比洛芬酯和硬膜外注射曲马多单独和联合应用的4种用药方式对剖宫产手术术后疼痛的镇痛效果。方法80例在腰麻硬膜外联合阻滞下行择期剖宫产的产妇被随机分为4组,每组20例:FT组在胎儿娩出夹闭脐带即刻(T1)静脉注射氟比...目的比较静脉注射氟比洛芬酯和硬膜外注射曲马多单独和联合应用的4种用药方式对剖宫产手术术后疼痛的镇痛效果。方法80例在腰麻硬膜外联合阻滞下行择期剖宫产的产妇被随机分为4组,每组20例:FT组在胎儿娩出夹闭脐带即刻(T1)静脉注射氟比洛芬酯50mg,关腹膜时(T2)硬膜外注射曲马多100mg;FF组在T1和T2时点分别静脉注射氟比洛芬酯50mg;T组仅在T2时点硬膜外注射曲马多100mg;F组仅在T2静脉注射氟比洛芬酯50mg。观察术后2、4、8、12、24h的疼痛视觉模拟评分(visual analog scales,VAS),记录术后需要实施补救镇痛的产妇例数及补救镇痛的次数,记录产妇24h内恶心或呕吐的情况及泌乳发动时间。结果4组产妇术后2h的VAS比较无统计学差异,而术后4、8、12和24hFF组明显低于其余3组(P<0.05),而其余3组间差异无统计学意义。F组有7例,T组有4例,FT组有2例术后使用镇痛药,FF组无产妇术后需要补救镇痛,4组比较有统计学差异(P=0.0149)。恶心呕吐的发生率4组间差异无统计学意义。4组产妇术后泌乳发动时间比较无统计学差异(F=0.54,P=0.657)。结论剖宫产手术胎儿娩出即刻及关腹时分别给予静脉氟比洛芬酯脂微球注射液能有效缓解术后疼痛,减少术后镇痛药的需要,是一种安全有效的镇痛方法。展开更多
An improved structure of Schottky rectifier, called a trapezoid mesa trench metal oxide semiconductor （MOS） barrier Schottky rectifier （TM-TMBS）, is proposed and studied by two-dimensional numerical simulations. B...An improved structure of Schottky rectifier, called a trapezoid mesa trench metal oxide semiconductor （MOS） barrier Schottky rectifier （TM-TMBS）, is proposed and studied by two-dimensional numerical simulations. Both forward and especially better reverse I-V characteristics, including lower leakage current and higher breakdown voltage, are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier （TMBS） as well as a conventional planar Schottky barrier diode rectifier. Optimized device parameters corresponding to the requirement for high breakdown voltage are given. With optimized parameters, TM-TMBS attains a breakdown voltage of 186 V, which is 6.3% larger than that of the optimized TMBS, and a leakage current of 4.3×10^-6 A/cm2, which is 26% smaller than that of the optimized TMBS. The relationship between optimized breakdown voltage and some device parameters is studied. Explanations and design rules are given according to this relationship.展开更多
文摘目的比较静脉注射氟比洛芬酯和硬膜外注射曲马多单独和联合应用的4种用药方式对剖宫产手术术后疼痛的镇痛效果。方法80例在腰麻硬膜外联合阻滞下行择期剖宫产的产妇被随机分为4组,每组20例:FT组在胎儿娩出夹闭脐带即刻(T1)静脉注射氟比洛芬酯50mg,关腹膜时(T2)硬膜外注射曲马多100mg;FF组在T1和T2时点分别静脉注射氟比洛芬酯50mg;T组仅在T2时点硬膜外注射曲马多100mg;F组仅在T2静脉注射氟比洛芬酯50mg。观察术后2、4、8、12、24h的疼痛视觉模拟评分(visual analog scales,VAS),记录术后需要实施补救镇痛的产妇例数及补救镇痛的次数,记录产妇24h内恶心或呕吐的情况及泌乳发动时间。结果4组产妇术后2h的VAS比较无统计学差异,而术后4、8、12和24hFF组明显低于其余3组(P<0.05),而其余3组间差异无统计学意义。F组有7例,T组有4例,FT组有2例术后使用镇痛药,FF组无产妇术后需要补救镇痛,4组比较有统计学差异(P=0.0149)。恶心呕吐的发生率4组间差异无统计学意义。4组产妇术后泌乳发动时间比较无统计学差异(F=0.54,P=0.657)。结论剖宫产手术胎儿娩出即刻及关腹时分别给予静脉氟比洛芬酯脂微球注射液能有效缓解术后疼痛,减少术后镇痛药的需要,是一种安全有效的镇痛方法。
基金Project supported by the International Research Training Group "Materials and Concepts for Interconnects and Nanosystems"
文摘An improved structure of Schottky rectifier, called a trapezoid mesa trench metal oxide semiconductor （MOS） barrier Schottky rectifier （TM-TMBS）, is proposed and studied by two-dimensional numerical simulations. Both forward and especially better reverse I-V characteristics, including lower leakage current and higher breakdown voltage, are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier （TMBS） as well as a conventional planar Schottky barrier diode rectifier. Optimized device parameters corresponding to the requirement for high breakdown voltage are given. With optimized parameters, TM-TMBS attains a breakdown voltage of 186 V, which is 6.3% larger than that of the optimized TMBS, and a leakage current of 4.3×10^-6 A/cm2, which is 26% smaller than that of the optimized TMBS. The relationship between optimized breakdown voltage and some device parameters is studied. Explanations and design rules are given according to this relationship.
