Laser-driven proton-induced x-ray emission(laser-PIXE) is a nuclear analysis method based on the compact laser ion accelerator. Due to the transient process of ion acceleration, the laser-PIXE signals are usually spur...Laser-driven proton-induced x-ray emission(laser-PIXE) is a nuclear analysis method based on the compact laser ion accelerator. Due to the transient process of ion acceleration, the laser-PIXE signals are usually spurted within nanoseconds and accompanied by strong electromagnetic pulses(EMP), so traditional multi-channel detectors are no longer applicable.In this work, we designed a reflective elliptical crystal spectrometer for the diagnosis of laser-PIXE. The device can detect the energy range of 1 keV–11 ke V with a high resolution. A calibration experiment was completed on the electrostatic accelerator of Peking University using samples of Al, Ti, Cu, and ceramic artifacts. The detection efficiency of the elliptical crystal spectrometer was obtained in the order of 10-9.展开更多
Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here w...Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11975037 and 11921006)the National Grand Instrument Project of China (Grant Nos. 2019YFF01014400 and 2019YFF01014404)。
文摘Laser-driven proton-induced x-ray emission(laser-PIXE) is a nuclear analysis method based on the compact laser ion accelerator. Due to the transient process of ion acceleration, the laser-PIXE signals are usually spurted within nanoseconds and accompanied by strong electromagnetic pulses(EMP), so traditional multi-channel detectors are no longer applicable.In this work, we designed a reflective elliptical crystal spectrometer for the diagnosis of laser-PIXE. The device can detect the energy range of 1 keV–11 ke V with a high resolution. A calibration experiment was completed on the electrostatic accelerator of Peking University using samples of Al, Ti, Cu, and ceramic artifacts. The detection efficiency of the elliptical crystal spectrometer was obtained in the order of 10-9.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11875077,11975037,and 11921006)the National Grand Instrument Project of China(Grant Nos.2019YFF01014400 and 2019YFF01014404).
文摘Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.
