GaSb epilayers were grown on GaSb and GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The properties of GaSb layers were characterized by low temperature photoluminescence (PL) ...GaSb epilayers were grown on GaSb and GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The properties of GaSb layers were characterized by low temperature photoluminescence (PL) spectra and scanning electron acoustic microscopy (SEAM) images. The temperature dependence of the PL spectrum was investigated and a red shift of bound excitons was observed in high quality epilayer. The pyramids of the surface and the buried subsurfaces were observed by scanning electron microscopy (SEM) and scanning electron acoustic microscopy (SEAM), and their growth model was discussed.展开更多
Scanning electron acoustic microscopy (SEAM) is a new technique for imasing and characterization ofthermal, elastic and pyroelectric property variations on a microscale resolution. The signal generation mechanisms and...Scanning electron acoustic microscopy (SEAM) is a new technique for imasing and characterization ofthermal, elastic and pyroelectric property variations on a microscale resolution. The signal generation mechanisms and the application of scanning electron acoustic microscopy in GalnAsSb alloy grown by MOCVD wereinvestigated. Defects below the surface of GalnAsSb alloy were found by SEAM images and cathodelumi-nescence. The results show that electronacoustic imaging has its own features over secondary electron imag-ing.展开更多
The calculated methods of the compositional dependence of the energy bandgap for Ga_xIn_(1-x)As_(1-y)Sb_y quaternary alloys are discussed in this paper. The dielectric theory of electronegativity and the linearinterpo...The calculated methods of the compositional dependence of the energy bandgap for Ga_xIn_(1-x)As_(1-y)Sb_y quaternary alloys are discussed in this paper. The dielectric theory of electronegativity and the linearinterpolation method were respectively used to calculate the compositional dependence of the energybandgap for Ca_xIn_(1-x)As_(1-y)Sb_y quaternary alloys. The same formula was deduced from the two schemes.According to the two formulas, we calculate the energy handgap as a function of alloy compositions forGa_xIn_(1-x)As_(1-y)Sb_y quaternary alloys: moreover, the temperature effect was lead into the formulas. Com-paring the calculated values with the measured ones, we found that the calculated method is in good agree-ment with the experimental data for Ga_xIn_(1-x)As_(1-y_Sb_y quaternary alloys.展开更多
基金This work is supported by nology Cooperation Plan of LKS[2013]15）, the 2012 Doctor Normal University of China the Science and Tech- Guizhou Province （J- Foundation of Guizhou （Xun Zhou） Scholars of Ministry of Education of China, Ph.D. Programs Foundation of Ministry of Education of China （No.20120171120011）, the Open Fund of the State Key Laboratory on Integrated Optoelectronics of Jilin University （No.IOKL2013KF14）, the National Natural Science Foundation of China （No.61273310）.
文摘GaSb epilayers were grown on GaSb and GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The properties of GaSb layers were characterized by low temperature photoluminescence (PL) spectra and scanning electron acoustic microscopy (SEAM) images. The temperature dependence of the PL spectrum was investigated and a red shift of bound excitons was observed in high quality epilayer. The pyramids of the surface and the buried subsurfaces were observed by scanning electron microscopy (SEM) and scanning electron acoustic microscopy (SEAM), and their growth model was discussed.
文摘Scanning electron acoustic microscopy (SEAM) is a new technique for imasing and characterization ofthermal, elastic and pyroelectric property variations on a microscale resolution. The signal generation mechanisms and the application of scanning electron acoustic microscopy in GalnAsSb alloy grown by MOCVD wereinvestigated. Defects below the surface of GalnAsSb alloy were found by SEAM images and cathodelumi-nescence. The results show that electronacoustic imaging has its own features over secondary electron imag-ing.
文摘The calculated methods of the compositional dependence of the energy bandgap for Ga_xIn_(1-x)As_(1-y)Sb_y quaternary alloys are discussed in this paper. The dielectric theory of electronegativity and the linearinterpolation method were respectively used to calculate the compositional dependence of the energybandgap for Ca_xIn_(1-x)As_(1-y)Sb_y quaternary alloys. The same formula was deduced from the two schemes.According to the two formulas, we calculate the energy handgap as a function of alloy compositions forGa_xIn_(1-x)As_(1-y)Sb_y quaternary alloys: moreover, the temperature effect was lead into the formulas. Com-paring the calculated values with the measured ones, we found that the calculated method is in good agree-ment with the experimental data for Ga_xIn_(1-x)As_(1-y_Sb_y quaternary alloys.
