High carrier recombination loss at the metal and silicon contact regions is one of the dominant factors constraining the power conversion efficiency(PCE)of crystalline silicon(c-Si)solar cells.Metal compound-based car...High carrier recombination loss at the metal and silicon contact regions is one of the dominant factors constraining the power conversion efficiency(PCE)of crystalline silicon(c-Si)solar cells.Metal compound-based carrier-selective contacts are being intensively developed to address this issue.In this work,we present a high-performance electron-selective SiO_(x)/MgO_(x)contact for c-Si solar cells.The SiO_(x)/MgO_(x)stack is prepared by thermally-grown SiO_(x)(∼0.7 nm)and thermally-evaporated MgO_(x)(~1.0 nm).The electron selectivity of SiO_(x)/MgO_(x)contact is investigated by measuring the surface passivation and the contact resistivity(ρ_(c))on the c-Si surface.The results demonstrate that optimized SiO_(x)/MgO_(x)contact displays a very lowρ_(c)(3.4 mΩcm^(2))and a good surface passivation on an n-type c-Si surface simultaneously.A high PCE of 21.1%is achieved on an n-type c-Si solar cell featuring a full-area SiO_(x)/MgO_(x)rear contact.展开更多
基金financially supported by the National Natural Science Foundation of China(62174114)the National Key R&D Program of China(2022YFB4200203)+2 种基金the Department of Science and Technology of Jiangsu Province(BE2022036,BE2022027,and BE2022023)the Distinguished Professor Award of Jiangsu Provincethe"Dual Carbon"Science and Technology Project of Suzhou(ST202219)。
文摘High carrier recombination loss at the metal and silicon contact regions is one of the dominant factors constraining the power conversion efficiency(PCE)of crystalline silicon(c-Si)solar cells.Metal compound-based carrier-selective contacts are being intensively developed to address this issue.In this work,we present a high-performance electron-selective SiO_(x)/MgO_(x)contact for c-Si solar cells.The SiO_(x)/MgO_(x)stack is prepared by thermally-grown SiO_(x)(∼0.7 nm)and thermally-evaporated MgO_(x)(~1.0 nm).The electron selectivity of SiO_(x)/MgO_(x)contact is investigated by measuring the surface passivation and the contact resistivity(ρ_(c))on the c-Si surface.The results demonstrate that optimized SiO_(x)/MgO_(x)contact displays a very lowρ_(c)(3.4 mΩcm^(2))and a good surface passivation on an n-type c-Si surface simultaneously.A high PCE of 21.1%is achieved on an n-type c-Si solar cell featuring a full-area SiO_(x)/MgO_(x)rear contact.
