In_(x)Ga_(1-x)N alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique.Scanning electron microscopy and x-ray diffraction results sh...In_(x)Ga_(1-x)N alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique.Scanning electron microscopy and x-ray diffraction results show that our samples can be divided into two groups:pseudomorphic (0.13 ≤ x ≤ 0.16) and relaxed (0.18 ≤ x ≤ 0.23).The prominent enhancement of A1 longitudinal-optical (LO) mode is found with 325nm laser excitation.For pseudomorphic samples,the frequencies of A1 (LO) phonons agree well with the theoretical predictions,which verifies that the samples are fully strained.For relaxed In_(x)Ga_(1-x)N samples,a linear dependence of the A1 (LO) mode frequency is obtained:Ωo(x) =(740.8 ± 3.3) - (143.1 ± 16.0)x,which is the evidence of one-mode behavior in In_(x)Ga_(1-x)N ternary alloys.Residual strains in these partially relaxed samples are also evaluated.展开更多
基金Supported by the National Basic Research Program of China(2011CB301900)the Natioanal Hi-Tech Research and Develop-ment Program of China(2011AA03A103)+2 种基金the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004)the Natural Science Foundation of Jiangsu Province(BK2011010,BK2010385,BK2010045,BK2010178)the Research Funds from NJU-Yangzhou Institute of Opto-electronics,Fok Ying Tong Education Foundation(122028).
文摘In_(x)Ga_(1-x)N alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique.Scanning electron microscopy and x-ray diffraction results show that our samples can be divided into two groups:pseudomorphic (0.13 ≤ x ≤ 0.16) and relaxed (0.18 ≤ x ≤ 0.23).The prominent enhancement of A1 longitudinal-optical (LO) mode is found with 325nm laser excitation.For pseudomorphic samples,the frequencies of A1 (LO) phonons agree well with the theoretical predictions,which verifies that the samples are fully strained.For relaxed In_(x)Ga_(1-x)N samples,a linear dependence of the A1 (LO) mode frequency is obtained:Ωo(x) =(740.8 ± 3.3) - (143.1 ± 16.0)x,which is the evidence of one-mode behavior in In_(x)Ga_(1-x)N ternary alloys.Residual strains in these partially relaxed samples are also evaluated.
