An analysis technique combining RBS with PIXE technology by x-particles incident beam was constructed and applied to analyse light impurities in heavier substrates.It can run in measuring Rutherford backscattering and...An analysis technique combining RBS with PIXE technology by x-particles incident beam was constructed and applied to analyse light impurities in heavier substrates.It can run in measuring Rutherford backscattering and X-ray spectra in random and channeling mode,simultaneously.Being used to analyse sulphur atoms im- planted into GaAs single crystals,this method is relatively simple and quick-operating.It is especially useful for analysing light impurities in semiconductor compounds,optoelectronic and microwave materials.展开更多
Implanted He in Ti materials was detected by using the reaction . The variation of theamounts.of residual He in Ti samples can be measured with in situ technique at various target temperatures fromroom temperature to ...Implanted He in Ti materials was detected by using the reaction . The variation of theamounts.of residual He in Ti samples can be measured with in situ technique at various target temperatures fromroom temperature to 600℃. This in situ EPEBS technique can also be used for analysis of the elements ofD-B.展开更多
文摘An analysis technique combining RBS with PIXE technology by x-particles incident beam was constructed and applied to analyse light impurities in heavier substrates.It can run in measuring Rutherford backscattering and X-ray spectra in random and channeling mode,simultaneously.Being used to analyse sulphur atoms im- planted into GaAs single crystals,this method is relatively simple and quick-operating.It is especially useful for analysing light impurities in semiconductor compounds,optoelectronic and microwave materials.
文摘Implanted He in Ti materials was detected by using the reaction . The variation of theamounts.of residual He in Ti samples can be measured with in situ technique at various target temperatures fromroom temperature to 600℃. This in situ EPEBS technique can also be used for analysis of the elements ofD-B.
