We successfully used the metal mediated-water bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH:H...We successfully used the metal mediated-water bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH:H2O2=1:10. SEM and PL resuls show that water bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.展开更多
基金This work was supported by the National Natural Science Foundation of China (Grant No. 69825107) NSFC-RGC Joint program: NSFC5001161953 and N_HKU028/00.
文摘We successfully used the metal mediated-water bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH:H2O2=1:10. SEM and PL resuls show that water bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.
