The photoelectric properties of conductive films are improved by doping Ag on aluminum-doped zinc oxide(AZO)films by laser induced forward transfer(LIFT).Firstly,the picosecond laser induced transfer mechanism of Ag f...The photoelectric properties of conductive films are improved by doping Ag on aluminum-doped zinc oxide(AZO)films by laser induced forward transfer(LIFT).Firstly,the picosecond laser induced transfer mechanism of Ag films was revealed by numerical simulation;then,different-thickness Ag films were deposited on the AZO films by picosecond LIFT.When the film thickness is 30 nm and,50 nm,we have successfully obtained some Ag-AZO films with better optoelectronic properties by adjusting the laser parameters.展开更多
基金partially supported by the Jiangsu Government Scholarship for Overseas Studies(No.JS-2018-253)the Jiangsu Natural Science Foundation Youth Fund(No.BK20150529)the National Science Foundation for Post-doctoral Scientists of China(No.2015M571678)。
文摘The photoelectric properties of conductive films are improved by doping Ag on aluminum-doped zinc oxide(AZO)films by laser induced forward transfer(LIFT).Firstly,the picosecond laser induced transfer mechanism of Ag films was revealed by numerical simulation;then,different-thickness Ag films were deposited on the AZO films by picosecond LIFT.When the film thickness is 30 nm and,50 nm,we have successfully obtained some Ag-AZO films with better optoelectronic properties by adjusting the laser parameters.