针对手持移动摄像装置拍摄视频序列相邻帧间存在平移、小角度旋转运动,而且易受噪声、光照变化的影响等问题,提出一种基于优化Oriented FAST and rotated BRIEF(ORB)特征匹配的实时鲁棒电子稳像算法。对相邻帧预处理后用Oriented FAST...针对手持移动摄像装置拍摄视频序列相邻帧间存在平移、小角度旋转运动,而且易受噪声、光照变化的影响等问题,提出一种基于优化Oriented FAST and rotated BRIEF(ORB)特征匹配的实时鲁棒电子稳像算法。对相邻帧预处理后用Oriented FAST算子检测特征点,再用Rotated BRIEF描述提取的特征点并采用近邻汉明距离匹配特征点对,然后采用级联滤波去除误匹配点对,最后使用迭代最小二乘法(ILSM)拟合模型参量进行运动补偿实现稳像。图像匹配测试和稳像实验结果表明:基于改进的ORB算法的电子稳像方法补偿每一帧的时间均小于0.1s,定位精度可达亚像素级,能有效补偿帧间平移旋转运动,而且对噪声和光照变化有较强鲁棒性。经稳像处理后,实拍视频质量明显提高,峰值信噪比(PSNR)平均提高了10db。展开更多
The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are chang...The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.展开更多
文摘针对手持移动摄像装置拍摄视频序列相邻帧间存在平移、小角度旋转运动,而且易受噪声、光照变化的影响等问题,提出一种基于优化Oriented FAST and rotated BRIEF(ORB)特征匹配的实时鲁棒电子稳像算法。对相邻帧预处理后用Oriented FAST算子检测特征点,再用Rotated BRIEF描述提取的特征点并采用近邻汉明距离匹配特征点对,然后采用级联滤波去除误匹配点对,最后使用迭代最小二乘法(ILSM)拟合模型参量进行运动补偿实现稳像。图像匹配测试和稳像实验结果表明:基于改进的ORB算法的电子稳像方法补偿每一帧的时间均小于0.1s,定位精度可达亚像素级,能有效补偿帧间平移旋转运动,而且对噪声和光照变化有较强鲁棒性。经稳像处理后,实拍视频质量明显提高,峰值信噪比(PSNR)平均提高了10db。
基金Project supported by the Foundation for Scientific Instrument and Equipment Development,Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61435012)
文摘The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.
