无论氢在电子器件内部以何种形式(H2分子、H原子或H+离子)存在,均会对电子器件电离损伤产生作用,进而影响器件的抗辐照能力。本文深入研究了氢气和空气气氛条件下1 Me V电子辐照栅控横向PNP(GLPNP)型双极晶体管的辐射损伤缺陷演化行为...无论氢在电子器件内部以何种形式(H2分子、H原子或H+离子)存在,均会对电子器件电离损伤产生作用,进而影响器件的抗辐照能力。本文深入研究了氢气和空气气氛条件下1 Me V电子辐照栅控横向PNP(GLPNP)型双极晶体管的辐射损伤缺陷演化行为。利用Keithley 4200SCS半导体参数测试仪对不同气氛下辐照过程中晶体管进行在线原位电性能参数测试,研究晶体管电性能退化与电子辐照注量和氢气深度之间的关系;基于栅扫技术(GS)和深能级瞬态谱技术(DLTS),研究双极晶体管中氢诱导电离损伤缺陷演化的基本特征。研究表明,与空气气氛相比,氢气气氛下电子辐照导致GLPNP的基极电流增加显著,而集电极电流明显降低,产生更多的氧化物电荷和界面态,这些现象均说明氢气加剧双极晶体管的电离辐射损伤。展开更多
电子是空间带电粒子辐射环境的重要组成部分,会对航天用微电子器件产生严重的辐射损伤.因此,对电子器件进行有效的辐射防护至关重要,迫切需要一种轻质、高性能和低成本的辐射防护材料.富氢的聚乙烯(PE)/碳纳米管(CNTs)复合材料是富有前...电子是空间带电粒子辐射环境的重要组成部分,会对航天用微电子器件产生严重的辐射损伤.因此,对电子器件进行有效的辐射防护至关重要,迫切需要一种轻质、高性能和低成本的辐射防护材料.富氢的聚乙烯(PE)/碳纳米管(CNTs)复合材料是富有前途的空间辐射防护材料.针对PE/CNT复合材料空间辐射防护应用的需要,系统研究低密度聚乙烯/多壁碳纳米管(LDPE/MWCNTs)复合材料电子辐照LDPE/MWCNTs的熔融与结晶行为,具有重要的学术价值与工程实际意义.本文利用差热扫描量热仪(DSC)和同步辐射X射线小角散射(SAXS)及广角衍射(WAXD),针对110 keV低能电子作用下LDPE/MWCNTs复合材料的熔融与结晶行为进行研究.结果表明,MWCNTs的添加,可使LDPE/MWCNTs复合材料在加热过程中的起始融化温度升高,而终止融化温度降低,并使冷却过程中的起始结晶温度提高,而终止结晶温度降低,结晶度增加.在融化过程中,MWCNTs可阻碍LDPE基体非晶区及晶区分子链运动,抑制LDPE基体的初始融化,在开始融化后促进融化过程;在结晶过程中,MWCNTs促进LDPE基体晶体的形成,并抑制晶体长大.110 ke V电子辐照可抑制LDPE基体的非晶区膨胀,延缓LDPE基体中片晶的初始融化;结晶过程中,110 keV电子辐照抑制LDPE基体的非晶区收缩,并抑制晶体长大.展开更多
Bipolar junction transistors(BJTs) are often used in spacecraft due to their excellent working characteristics. However,the complex space radiation environment induces primary knock-on atoms(PKAs) in BJTs through coll...Bipolar junction transistors(BJTs) are often used in spacecraft due to their excellent working characteristics. However,the complex space radiation environment induces primary knock-on atoms(PKAs) in BJTs through collisions, resulting in hard-to-recover displacement damage and affecting the performance of electronic components. In this paper, the properties of PKAs induced by typical space heavy ions(C, N, O, Fe) in BJTs are investigated using Monte Carlo simulations. The simulated results show that the energy spectrum of ion-induced PKAs is primarily concentrated in the low-energy range(17eV–100eV) and displays similar features across all tested ions. The PKAs induced by the collision of energetic ions have large forward scattering angles, mainly around 88°. Moreover, the distribution of PKAs within a transistor as a function of depth displays a peak characteristic, and the peak position is linearly proportional to the incident energy at a certain energy range. These simulation outcomes serve as crucial theoretical support for long-term semiconductor material defect evolution and ground testing of semiconductor devices.展开更多
文摘无论氢在电子器件内部以何种形式(H2分子、H原子或H+离子)存在,均会对电子器件电离损伤产生作用,进而影响器件的抗辐照能力。本文深入研究了氢气和空气气氛条件下1 Me V电子辐照栅控横向PNP(GLPNP)型双极晶体管的辐射损伤缺陷演化行为。利用Keithley 4200SCS半导体参数测试仪对不同气氛下辐照过程中晶体管进行在线原位电性能参数测试,研究晶体管电性能退化与电子辐照注量和氢气深度之间的关系;基于栅扫技术(GS)和深能级瞬态谱技术(DLTS),研究双极晶体管中氢诱导电离损伤缺陷演化的基本特征。研究表明,与空气气氛相比,氢气气氛下电子辐照导致GLPNP的基极电流增加显著,而集电极电流明显降低,产生更多的氧化物电荷和界面态,这些现象均说明氢气加剧双极晶体管的电离辐射损伤。
文摘电子是空间带电粒子辐射环境的重要组成部分,会对航天用微电子器件产生严重的辐射损伤.因此,对电子器件进行有效的辐射防护至关重要,迫切需要一种轻质、高性能和低成本的辐射防护材料.富氢的聚乙烯(PE)/碳纳米管(CNTs)复合材料是富有前途的空间辐射防护材料.针对PE/CNT复合材料空间辐射防护应用的需要,系统研究低密度聚乙烯/多壁碳纳米管(LDPE/MWCNTs)复合材料电子辐照LDPE/MWCNTs的熔融与结晶行为,具有重要的学术价值与工程实际意义.本文利用差热扫描量热仪(DSC)和同步辐射X射线小角散射(SAXS)及广角衍射(WAXD),针对110 keV低能电子作用下LDPE/MWCNTs复合材料的熔融与结晶行为进行研究.结果表明,MWCNTs的添加,可使LDPE/MWCNTs复合材料在加热过程中的起始融化温度升高,而终止融化温度降低,并使冷却过程中的起始结晶温度提高,而终止结晶温度降低,结晶度增加.在融化过程中,MWCNTs可阻碍LDPE基体非晶区及晶区分子链运动,抑制LDPE基体的初始融化,在开始融化后促进融化过程;在结晶过程中,MWCNTs促进LDPE基体晶体的形成,并抑制晶体长大.110 ke V电子辐照可抑制LDPE基体的非晶区膨胀,延缓LDPE基体中片晶的初始融化;结晶过程中,110 keV电子辐照抑制LDPE基体的非晶区收缩,并抑制晶体长大.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11974091,51973046,U22B2044,and 21673025)the Open Projects of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No.SKLIPR2020)。
文摘Bipolar junction transistors(BJTs) are often used in spacecraft due to their excellent working characteristics. However,the complex space radiation environment induces primary knock-on atoms(PKAs) in BJTs through collisions, resulting in hard-to-recover displacement damage and affecting the performance of electronic components. In this paper, the properties of PKAs induced by typical space heavy ions(C, N, O, Fe) in BJTs are investigated using Monte Carlo simulations. The simulated results show that the energy spectrum of ion-induced PKAs is primarily concentrated in the low-energy range(17eV–100eV) and displays similar features across all tested ions. The PKAs induced by the collision of energetic ions have large forward scattering angles, mainly around 88°. Moreover, the distribution of PKAs within a transistor as a function of depth displays a peak characteristic, and the peak position is linearly proportional to the incident energy at a certain energy range. These simulation outcomes serve as crucial theoretical support for long-term semiconductor material defect evolution and ground testing of semiconductor devices.
