Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the...Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.展开更多
We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings...We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.展开更多
成功制备出室温激射波长为2μm的Ga Sb基侧向耦合分布反馈量子阱激光器.采用全息曝光及电感耦合等离子体刻蚀技术制备二阶布拉格光栅.优化了光栅制备的刻蚀条件,并获得室温2μm单纵模激射.激光器输出光功率超过5 m W,最大边模抑制比达到...成功制备出室温激射波长为2μm的Ga Sb基侧向耦合分布反馈量子阱激光器.采用全息曝光及电感耦合等离子体刻蚀技术制备二阶布拉格光栅.优化了光栅制备的刻蚀条件,并获得室温2μm单纵模激射.激光器输出光功率超过5 m W,最大边模抑制比达到24 d B.展开更多
We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles ...We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.展开更多
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pai...InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).展开更多
We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W’ configuration of the active quantum we...We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W’ configuration of the active quantum wells and the ‘Carrier Rebalancing’ method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T = 15℃. And a low threshold current density of 267 A/cm;is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.展开更多
The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epit...The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.展开更多
We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector.Th...We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector.The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper.And the quantum well cascade laser with 100-μm-wide,2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature.The characteristic temperature T_(0) is estimated at above 60 K.展开更多
基金the Science and Technology Program of Guangzhou(Grant No.202103030001)the KeyArea Research and Development Program of Guangdong Province(Grant No.2018B030329001)+8 种基金the National Natural Science Foundation of China(Grant Nos.62035017,61505196,and 62204238)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the Major Program of the National Natural Science Foundation of China(Grant Nos.61790580 and 61790581)the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project(Grant No.21SH06)Jincheng Key Research and Development Project(Grant No.20210209)the Key R&D Program of Shanxi Province(Grant No.202102030201004)the R&D Program of Guangdong Province(Grant Nos.2018B030329001 and2020B0303020001)Shenzhen Technology Research Project(Grant No.JSGG20201102145200001)the National Key Technologies R&D Program of China(Grant No.2018YFA0306100)。
文摘Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.
基金Supported by National Basic Research Program of China(2014 CB643903,2013 CB932904)National Natural Science Foundation of China(61435012,61274125,and 61274013)+1 种基金National Special funds for the Development of Major Research Equipment and Instruments,China(2012YQ140005)Strategic Priority Research Program(B)of Chinese Academy of Sciences(XDB01010200)
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2014CB643903 and 2013CB932904)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)+1 种基金the National Natural Science Foundation of China(Grant Nos.61435012,61274013,61306088,and 61290303)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200)
文摘We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.
基金Supported by the National Basic Research Program of China(2014CB643903,2013CB932904)the National Natural Science Foundation of China(61435012,61306088,61274013)
基金Supported by National Natural Science Foundation of China (617905 80,61790581,61790582,61435012)the National Key Technologies R&D Program of China (2018YFA0306101)+1 种基金the Key R&D Program of Guangdong Province (2018R030329001)the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20170032)
文摘通过MBE外延系统生长了1.3µm的GaAs基InAs量子点激光器.为了获得更好的器件性能,InAs量子点的最优生长温度被标定为520℃,并且在有源区中引入Be掺杂.制备了脊宽100µm,腔长2 mm的激光器单管器件,在未镀膜的情况下,达到了峰值功率1.008 W的室温连续工作,阈值电流密度为110 A/cm^-2,在80℃下仍然可以实现连续工作,在50℃以下范围内,特征温度达到405 K.
基金Supported by the National Basic Research Program of China under Grant Nos 2014CB643903 and 2013CB932904the National Natural Science Foundation of China under Grant Nos 61435012 and 61290303the Strategic Priority Research Program(B) of the Chinese Academy of Sciences under Grant No XDB01010200
文摘We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61790580 and 61435012)the National Basic Research Program of China(Grant No.2014CB643903)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
文摘InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).
基金Project supported by the Major Program of the National Natural Science Foundation of China(Grant No.61790580)the National Natural Science Foundation of China(Grant No.61435012)the National Basic Research Program of China(Grant No.2014CB643903)
文摘We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W’ configuration of the active quantum wells and the ‘Carrier Rebalancing’ method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T = 15℃. And a low threshold current density of 267 A/cm;is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.
基金supported by the Major Program of the National Natural Science Foundation of China(Grant Nos.61790581,61790582,and 61790584)the National Natural Science Foundation of China(Grant No.61435012)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
文摘The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.
基金Project supported by the Major Program of the National Natural Science Foundation of China(Grant No.61790581)the Key Area Research and Development Program of Guangdong Province,China(Grant No.2020B0303020001).
文摘We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector.The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper.And the quantum well cascade laser with 100-μm-wide,2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature.The characteristic temperature T_(0) is estimated at above 60 K.
