电迁移(ElectroMigration)效应是集成电路中重要的可靠性项目。本文提出了测试思想从传统的"测试到失效"(Test to Fail)到"测试到目的"(Test to Target)的转变,详细讨论了定数与定时截尾(Censored)测试在封装级电...电迁移(ElectroMigration)效应是集成电路中重要的可靠性项目。本文提出了测试思想从传统的"测试到失效"(Test to Fail)到"测试到目的"(Test to Target)的转变,详细讨论了定数与定时截尾(Censored)测试在封装级电迁移测试中的应用,分析了实际测试当中可能碰到的各种情况并提出了处理方法,总结了一个完整的截尾测试处理流程。展开更多
统计过程控制（Statistical Process Control）是质量管理科学中的一项重要技术。它使用控制图（Control Chart）对生产过程进行动态控制，检测预防不合格产品，不断改善生产过程。从它很早就已被纳入ISO9000《质量管理和质量保证》系...统计过程控制（Statistical Process Control）是质量管理科学中的一项重要技术。它使用控制图（Control Chart）对生产过程进行动态控制，检测预防不合格产品，不断改善生产过程。从它很早就已被纳入ISO9000《质量管理和质量保证》系列国际标准的要求可知统计过程控制在制造业中的重要性。控制图是在上世纪20年代初由美国贝尔电话实验室的休哈特博士（W．A．Shewhart）首先提出来的，展开更多
A metal-insulator-silicon （MIS） capacitor with hemi-spherical grained poly atomic layer deposition （ALD） deposited Al2O3 and multi-layered chemical vapor deposition （CVD） TiN structure is fabricated. The impact ...A metal-insulator-silicon （MIS） capacitor with hemi-spherical grained poly atomic layer deposition （ALD） deposited Al2O3 and multi-layered chemical vapor deposition （CVD） TiN structure is fabricated. The impact of the deposition process and post treatment condition on the MIS capacitor＇s time-dependent dielectric breakdown （TDDB） performance is also studied. With an optimized process, it is confirmed by Auger electron spectroscopy and secondary ion mass spectrometry analysis that the Al（CH3）3/O3-based ALD Al2O3 dielectric film is carbon free and the hydrogen content is as low as 9 × 1019 cm-3. The top electrode TiN is obtained by multi-layered TiCl4/NH3 CVD deposited TiN followed by 120 s post NH3 treatment after each layer. This has higher diffusion barrier in preventing impurity diffusion through TiN into the Al2O3 dielectric due to its smaller grain size. As shown in energy dispersive X-ray analysis, there is no chlorine residue in the MIS capacitor structure. The leakage current of the capacitor is lower than 1 × 10-12 A/cm2. No early failures under stress conditions are found in its TDDB test. The novel MIS capacitor is proven to have excellent reliability for advanced DRAM technology.展开更多
文摘电迁移(ElectroMigration)效应是集成电路中重要的可靠性项目。本文提出了测试思想从传统的"测试到失效"(Test to Fail)到"测试到目的"(Test to Target)的转变,详细讨论了定数与定时截尾(Censored)测试在封装级电迁移测试中的应用,分析了实际测试当中可能碰到的各种情况并提出了处理方法,总结了一个完整的截尾测试处理流程。
文摘统计过程控制（Statistical Process Control）是质量管理科学中的一项重要技术。它使用控制图（Control Chart）对生产过程进行动态控制，检测预防不合格产品，不断改善生产过程。从它很早就已被纳入ISO9000《质量管理和质量保证》系列国际标准的要求可知统计过程控制在制造业中的重要性。控制图是在上世纪20年代初由美国贝尔电话实验室的休哈特博士（W．A．Shewhart）首先提出来的，
基金supported by the National Natural Science Foundation of China (No.50371033)the Specialized Research Fund for the Doctoral Program of Higher Education (No.20040674009)the Semiconductor Manufacturing International Corporation
文摘A metal-insulator-silicon （MIS） capacitor with hemi-spherical grained poly atomic layer deposition （ALD） deposited Al2O3 and multi-layered chemical vapor deposition （CVD） TiN structure is fabricated. The impact of the deposition process and post treatment condition on the MIS capacitor＇s time-dependent dielectric breakdown （TDDB） performance is also studied. With an optimized process, it is confirmed by Auger electron spectroscopy and secondary ion mass spectrometry analysis that the Al（CH3）3/O3-based ALD Al2O3 dielectric film is carbon free and the hydrogen content is as low as 9 × 1019 cm-3. The top electrode TiN is obtained by multi-layered TiCl4/NH3 CVD deposited TiN followed by 120 s post NH3 treatment after each layer. This has higher diffusion barrier in preventing impurity diffusion through TiN into the Al2O3 dielectric due to its smaller grain size. As shown in energy dispersive X-ray analysis, there is no chlorine residue in the MIS capacitor structure. The leakage current of the capacitor is lower than 1 × 10-12 A/cm2. No early failures under stress conditions are found in its TDDB test. The novel MIS capacitor is proven to have excellent reliability for advanced DRAM technology.
