电子元器件失效分析的过去、现在和未来

电子元器件是现代信息社会的基石,其质量和可靠性决定了电子设备和系统的可靠性和安全水平。电子元器件失效分析主要是为了发现并确定电子元器件的失效机理和原因,并反馈给研制和使用方作为改进的依据,以防止类似的失效复现,从而达到提高产品品质和可靠性的目的,因而失效分析在提升电子元器件的质量和可靠性方面起着至关重要的作用。首先,简要地介绍了电子元器件失效分析的发展历程、目前的发展现状;然后,分析和讨论了目前国内失效分析发展遇到的挑战和问题,包括高端芯片失效分析服务供给严重不足和失效分析人才匮乏等;最后,对将来电子元器件失效分析的发展规律和发展方向,特别是在高端芯片领域、关键技术突破和人才培养等方面进行了展望和分析,期望为电子元器件失效分析的发展提供参考借鉴。

Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature.The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semianalytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.

“双链”协同视角下的中亚装备制造业市场拓展研究

中国与中亚五国经济具有互补性,利用中国装备制造业的优势拓展中亚市场,既释放出中国装备制造业的全新活力,又契合了中亚五国发展制造业的战略规划。本文描述了装备制造业技术链与产业链协同发展的模型,发现在"技术——产品"、"产品——用户"的跃迁过程中存在"死亡谷"。本文认为:中国装备制造业实施技术标准战略和商业模式创新是跨越"死亡谷",拓展中亚装备制造业市场的有效途径。

广东省电子显微镜的发展回顾和思考

简要地介绍了国内外电子显微镜的早期发展简史,回顾了广东省早期的电子显微镜的发展历程,以及作为华南地区最早使用进口扫描电子显微镜的工业和信息化部电子第五研究所40年来电子显微设备能力的建设、应用及发展过程。同时,还针对当前我国电子显微镜行业研发人才缺乏、发展缓慢和开发利用不足等问题提出了一些看法和建议。

Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy

The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm^2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm^2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.

Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate

The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy(AFM), high resolution x-ray diffraction(HRXRD), reciprocal space map(RSM), and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and Ⅴ/Ⅲ ratio constant. The results show that the highest electron mobility is 10270 cm^2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.