In the past period of time, perovskite solar cells have gained tremendous developments in improving photovoltaic performance, but they still face severe challenges. Defects in perovskite layers, especially at grain bo...In the past period of time, perovskite solar cells have gained tremendous developments in improving photovoltaic performance, but they still face severe challenges. Defects in perovskite layers, especially at grain boundaries, severely limit the stabilization and efficiency of solar cells. In this work, we adopt 3-carboxyphenylboronic acid(CPBA) for modifying defects in perovskite thin films. Through the interaction among the carboxyl group, boronic acid and lead ions in the perovskite film, the crystallization effect of the perovskite molecular is greatly optimized. Moreover, the film defects are spontaneously passivated and the band gap is reduced, increasing the open circuit voltage and fill factor. Therefore,power conversion efficiency has been increased from 17.25% to 20.20%. This discovery provides a potential strategy for passivating the trap states in perovskite and enhancing the properties of devices.展开更多
文中介绍了世界上最大的可升降桥—法国福楼拜桥(Le Pont Flaubert)所处的自然环境、地理位置和概况,对法国福楼拜桥工程设计和施工中的主要技术创新、桥梁的特点等情况做了介绍。可升降桥既可解决城市交通的基本需要,也可保证大型船舶...文中介绍了世界上最大的可升降桥—法国福楼拜桥(Le Pont Flaubert)所处的自然环境、地理位置和概况,对法国福楼拜桥工程设计和施工中的主要技术创新、桥梁的特点等情况做了介绍。可升降桥既可解决城市交通的基本需要,也可保证大型船舶的通过,最大程度的保留了城市的航海文化,亦是桥梁和环境的和谐统一。展开更多
In order to fabricate high-performance inverted perovskite solar cells(Pe SCs), an appropriate hole transport layer(HTL) is essential since it will affect the hole extraction at perovskite/HTL interface and determine ...In order to fabricate high-performance inverted perovskite solar cells(Pe SCs), an appropriate hole transport layer(HTL) is essential since it will affect the hole extraction at perovskite/HTL interface and determine the crystallization quality of the subsequent perovskite films. Herein, a facile and simple method is developed by adding ethanolamine(ETA)into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) as HTL. The doping of a low-concentration ETA can efficiently modify the electrical properties of the PEDOT:PSS film and lower the highest occupied molecular orbital(HOMO) level, which is more suitable for the hole extraction from the perovskite to HTL. Besides, ETA-doped PEDOT:PSS will create a perovskite film with larger grain size and higher crystallinity. Hence, the results show that the open-circuit voltage of the device increases from 0.99 V to 1.06 V, and the corresponding power conversion efficiency(PCE)increases from 14.68% to 19.16%. The alkaline nature of ethanolamine greatly neutralizes the acidity of PEDOT:PSS, and plays a role in protecting the anode, leading the stability of the devices to be improved significantly. After being stored for2000 h, the PCE of ETA-doped PEDOT:PSS devices can maintain 84.2% of the initial value, which is much higher than67.1% of undoped devices.展开更多
基金Project supported by the Regional Joint Fund of the National Science Foundation of China (Grant No. U21A20492)the Sichuan Science and Technology Program (Grant Nos. 2022YFH0081, 2022YFG0012, and 2022YFG0013)+1 种基金sponsored by the Sichuan Province Key Laboratory of Display Science and TechnologyQiantang Science & Technology Innovation Center。
文摘In the past period of time, perovskite solar cells have gained tremendous developments in improving photovoltaic performance, but they still face severe challenges. Defects in perovskite layers, especially at grain boundaries, severely limit the stabilization and efficiency of solar cells. In this work, we adopt 3-carboxyphenylboronic acid(CPBA) for modifying defects in perovskite thin films. Through the interaction among the carboxyl group, boronic acid and lead ions in the perovskite film, the crystallization effect of the perovskite molecular is greatly optimized. Moreover, the film defects are spontaneously passivated and the band gap is reduced, increasing the open circuit voltage and fill factor. Therefore,power conversion efficiency has been increased from 17.25% to 20.20%. This discovery provides a potential strategy for passivating the trap states in perovskite and enhancing the properties of devices.
文摘文中介绍了世界上最大的可升降桥—法国福楼拜桥(Le Pont Flaubert)所处的自然环境、地理位置和概况,对法国福楼拜桥工程设计和施工中的主要技术创新、桥梁的特点等情况做了介绍。可升降桥既可解决城市交通的基本需要,也可保证大型船舶的通过,最大程度的保留了城市的航海文化,亦是桥梁和环境的和谐统一。
基金Project supported by the Regional Joint Fund of the Foundation of the National Natural Science Foundation of China(Grant No.U21A20492)the National Natural Science Foundation of China(Grant Nos.61421002,61675041,and 51703019)+1 种基金the Sichuan Provincial Science and Technology Program,China(Grant Nos.2021107,2019YFG0121,2019YJ0178,2020YFG0279,2020YFG0281,and 2021107)the Fund from the Sichuan Province Key Laboratory of Display Science and Technology,China。
文摘In order to fabricate high-performance inverted perovskite solar cells(Pe SCs), an appropriate hole transport layer(HTL) is essential since it will affect the hole extraction at perovskite/HTL interface and determine the crystallization quality of the subsequent perovskite films. Herein, a facile and simple method is developed by adding ethanolamine(ETA)into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) as HTL. The doping of a low-concentration ETA can efficiently modify the electrical properties of the PEDOT:PSS film and lower the highest occupied molecular orbital(HOMO) level, which is more suitable for the hole extraction from the perovskite to HTL. Besides, ETA-doped PEDOT:PSS will create a perovskite film with larger grain size and higher crystallinity. Hence, the results show that the open-circuit voltage of the device increases from 0.99 V to 1.06 V, and the corresponding power conversion efficiency(PCE)increases from 14.68% to 19.16%. The alkaline nature of ethanolamine greatly neutralizes the acidity of PEDOT:PSS, and plays a role in protecting the anode, leading the stability of the devices to be improved significantly. After being stored for2000 h, the PCE of ETA-doped PEDOT:PSS devices can maintain 84.2% of the initial value, which is much higher than67.1% of undoped devices.
