Oxygen vacancy induced carrier mobility enhancement in nano-multilayered ZrO_(2):Y_(2)O_(3)/SrTiO_(3)thin films for non-volatile memory devices

The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayeredheterostructure when the individual layer thickness is below a critical value.In this work,Pt/[ZrO_(2):Y_(2)O_(3)(YSZ)/SrTiO_(3)(STO)]n/Nb:SrTiO_(3)(NSTO)memristive devices were configurated through laser pulse deposited YSZ/STO nanomultilayeredactive layer with both Pt and NSTO acting as top and counter electrodes.Specifically,the Pt/[YSZ/STO]5/NSTO device with five consecutive layers of YSZ/STO thin film shows superior memristor performance,and itscorresponding carrier mobility presents a significantly enhanced value compared to that of other periodic numbers ofYSZ/STO composed memristive devices.This can be attributed to the increase of oxygen vacancy concentration in thedevice,as evidenced by both experimental results and theoretical analysis.This work provides a significant approach inimproving the performance of memristor dominated by oxygen vacancy transporting mechanism.

溅射Ni和Ni/Al对SiC陶瓷真空钎焊性能的影响

本工作采用磁控溅射的方法在SiC陶瓷表面分别溅射Ni薄膜和Ni/Al双层薄膜,然后将表面改性的SiC陶瓷片用真空钎焊的方法制备了以Al为钎料的钎焊接头,研究了表面溅射Ni和Ni/Al对SiC真空钎焊接头界面结合的影响。结果表明,表面溅射Ni薄膜的SiC钎焊接头平均剪切强度为69.4 MPa,表面溅射Ni/Al薄膜的SiC钎焊接头平均剪切强度为113.8 MPa,均高于未改性处理的SiC钎焊接头的平均剪切强度(48.4 MPa),其原因在于SiC表面溅射沉积Ni和Ni/Al薄膜,一方面能够避免脆性反应相Al4C3的生成对界面结合强度的降低,另一方面有助于改善铝钎料对SiC陶瓷表面的润湿。另外,相比于溅射单层Ni薄膜,采用Ni/Al双层薄膜改性的SiC钎焊接头,由于界面生成的强化相Al3Ni分布更为集中,起到了"锚定"钎缝的作用,使接头剪切强度得到了更大的提高。