A convenient high temperature solid-state reaction method was developed to fabricate Na1-xAl1-xSi1+xO4:Eu2+ phosphors.The as-prepared products were characterized by X-ray diffraction(XRD),photoluminescence(PL),and pho...A convenient high temperature solid-state reaction method was developed to fabricate Na1-xAl1-xSi1+xO4:Eu2+ phosphors.The as-prepared products were characterized by X-ray diffraction(XRD),photoluminescence(PL),and photoluminescence excitation(PLE).The luminescence of Na1-xAl1-xSi1+xO4:Eu2+ phosphors were characterized by the two corresponding emission centers at 535 and 440 nm.The excitation spectrum extended from 250 to 400 nm.A white light was observed by naked eye upon ultraviolet excitation.The relative...展开更多
Indium phosphide(InP) quantum dots(QDs) have shown great potential to replace the widely applied toxic cadmiumcontaining and lead perovskite QDs due to their similar emission wavelength range and emission peak width b...Indium phosphide(InP) quantum dots(QDs) have shown great potential to replace the widely applied toxic cadmiumcontaining and lead perovskite QDs due to their similar emission wavelength range and emission peak width but without intrinsic toxicity. Recently, electrically driven red and green InP-based quantum-dot light-emitting diodes(QLEDs) have achieved great progress in external quantum efficiency(EQE), reaching up to 12.2% and 6.3%, respectively. Despite the relatively poor device performance comparing with cadmium selenide(CdSe)-and perovskite-based QLEDs, these encouraging facts with unique environmental friendliness and solution-processability foreshadow the enormous potential of InP-based QLEDs for energy-efficient, high-color-quality thin-film display and solid-state lighting applications. In this article, recent advances in the research of the InP-based QLEDs have been discussed, with the main focus on device structure selection and interface research, as well as our outlook for on-going strategies of high-efficiency InP-based QLEDs.展开更多
基金supported by Science and Technology Development Fund (Shanghai, 0752nm008)Shanghai Leading Academic Discipline Project (JY601)
文摘A convenient high temperature solid-state reaction method was developed to fabricate Na1-xAl1-xSi1+xO4:Eu2+ phosphors.The as-prepared products were characterized by X-ray diffraction(XRD),photoluminescence(PL),and photoluminescence excitation(PLE).The luminescence of Na1-xAl1-xSi1+xO4:Eu2+ phosphors were characterized by the two corresponding emission centers at 535 and 440 nm.The excitation spectrum extended from 250 to 400 nm.A white light was observed by naked eye upon ultraviolet excitation.The relative...
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51675322,61605109,and 61735004)the National Key Research and Development Program of China(Grant No.2016YFB0401702)+2 种基金Shanghai Science and Technology Committee,China(Grant No.19010500600)Shanghai Rising-Star Program,China(Grant No.17QA1401600)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning,China
文摘Indium phosphide(InP) quantum dots(QDs) have shown great potential to replace the widely applied toxic cadmiumcontaining and lead perovskite QDs due to their similar emission wavelength range and emission peak width but without intrinsic toxicity. Recently, electrically driven red and green InP-based quantum-dot light-emitting diodes(QLEDs) have achieved great progress in external quantum efficiency(EQE), reaching up to 12.2% and 6.3%, respectively. Despite the relatively poor device performance comparing with cadmium selenide(CdSe)-and perovskite-based QLEDs, these encouraging facts with unique environmental friendliness and solution-processability foreshadow the enormous potential of InP-based QLEDs for energy-efficient, high-color-quality thin-film display and solid-state lighting applications. In this article, recent advances in the research of the InP-based QLEDs have been discussed, with the main focus on device structure selection and interface research, as well as our outlook for on-going strategies of high-efficiency InP-based QLEDs.
基金support from the National Natural Science Foundation of China(62174104,61735004,and 12174086)the National Key Research and Development Program of China(2016YFB0401702)the Shanghai Science and Technology Committee(19010500600)。
