Peng et al.[Science 379683(2023)]reported an effective method to improve the performance of perovskite solar cells by using thicker porous insulator contact(PIC)-alumina nanoplates.This method overcomes the trade-off ...Peng et al.[Science 379683(2023)]reported an effective method to improve the performance of perovskite solar cells by using thicker porous insulator contact(PIC)-alumina nanoplates.This method overcomes the trade-off between the open-circuit voltage and the fill factor through two mechanisms:reduced surface recombination velocity and increased bulk recombination lifetime due to better perovskite crystallinity.From arguments of drift-diffusion simulations,we find that an increase in mobility and carrier recombination lifetime in bulk are the key factors for minimizing the resistance-effect from thicker PICs and achieving a maximum power conversion efficiency(PCE)at approximately 25%reduced contact area.Furthermore,the partially replacement of perovskite films with thicker PICs would result in a reduction in short-current density,but the relative low refractive index of the PICs imbedded into the high refractive index perovskite creates light trapping structures that compensate for this loss.展开更多
In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and r...In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.展开更多
基金Project supported by the Qing-Lan Project from Yangzhou Universitythe National Natural Science Foundation of China (Grant No. 62375234)
文摘Peng et al.[Science 379683(2023)]reported an effective method to improve the performance of perovskite solar cells by using thicker porous insulator contact(PIC)-alumina nanoplates.This method overcomes the trade-off between the open-circuit voltage and the fill factor through two mechanisms:reduced surface recombination velocity and increased bulk recombination lifetime due to better perovskite crystallinity.From arguments of drift-diffusion simulations,we find that an increase in mobility and carrier recombination lifetime in bulk are the key factors for minimizing the resistance-effect from thicker PICs and achieving a maximum power conversion efficiency(PCE)at approximately 25%reduced contact area.Furthermore,the partially replacement of perovskite films with thicker PICs would result in a reduction in short-current density,but the relative low refractive index of the PICs imbedded into the high refractive index perovskite creates light trapping structures that compensate for this loss.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0403100 and 2017YFB0403101)the National Natural Science Foundation of China(Grant Nos.61404114,61504119,and 11004170)+1 种基金the China Postdoctoral Science Foundation(Grant No.2017M611923)the Jiangsu Planned Projects for Postdoctoral Research Funds,China(Grant No.1701067B)
文摘In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.
