Field emission characteristics of single-walled carbon nanotubes were studied by using a simple method in a field emission microscope.The nanotube emission gun works effectively at the room temperature under a thresho...Field emission characteristics of single-walled carbon nanotubes were studied by using a simple method in a field emission microscope.The nanotube emission gun works effectively at the room temperature under a threshold field as low as 3.9mV/μm.A typical I-V relationship of field emission was obtained with a high current density.The observed stable bright spots on the fluorescent screen originate from an ensemble emission from micro-ropes of the single-walled carbon nanotubes.展开更多
The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are descr...The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.59672013the 3 rd“Zhou Peiyuan Special Foundation for Mathematics and Physics”。
文摘Field emission characteristics of single-walled carbon nanotubes were studied by using a simple method in a field emission microscope.The nanotube emission gun works effectively at the room temperature under a threshold field as low as 3.9mV/μm.A typical I-V relationship of field emission was obtained with a high current density.The observed stable bright spots on the fluorescent screen originate from an ensemble emission from micro-ropes of the single-walled carbon nanotubes.
基金Project supported by the National Natural Science Foundation of China (Grant No. 19834080)Zhou Peiyuan Special Foundation of Mathematics and Physics
文摘The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented.
